Diode having vertical structure and method of manufacturing the same

• US 20060091420A1
• Filed: 12/12/2005
• Published: 05/04/2006
• Est. Priority Date: 10/26/2001
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Electronics, Inc. (LG Corporation)
• Inventors: Yoo, Myung Cheol
• Granted Patent: US 7,371,597 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/325 characterised by the doping materials
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01S 5/3013 AIIIBV compounds

Abstract

A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Claims

1-30. -30. (canceled)

31. A method of making a diode comprising:

forming a first n-GaN layer on a substrate;

forming an active layer on the first n-GaN layer;

forming a p-GaN layer on the active layer;

separating the substrate from the first n-GaN layer;

forming an n-type contact layer on the n-GaN layer;

forming a p-electrode on the p-GaN layer.

wherein the n-type contact layer acts as a reflective layer to reflect light from the active layer.

32. The method according to claim 31, wherein the p-electrode is formed prior to separating the substrate.

33. The method according to claim 31, further comprising forming a second n-GaN layer between the substrate and the first n-GaN layer.

34. The method according to claim 33, wherein the second n-GaN is formed using MOCVD.

35. The method according to claim 31, wherein the substrate includes sapphire.

36. The method according to claim 31, wherein the substrate is separated from the first n-GaN using a laser.

37. The method according to claim 31, further comprising forming a transparent conductive layer between the p-electrode and the p-GaN layer.

38. (canceled)

39. (canceled)

40. A method of forming a diode comprising:

forming an second GaN layer on a substrate having a first GaN layer;

forming an active layer on the second GaN layer;

forming a third GaN layer on the active layer;

separating the substrate from the first GaN layer; and

forming a first electrode on the first GaN layer where the substrate was separated;

wherein the first electrode is a reflective layer to reflect light from the active layer.

41. The method according to claim 40, wherein the second GaN layer is formed on the first GaN layer using MOCVD.

42. The method according to claim 40, wherein the first GaN layer is epitaxially grown on the substrate.

43. The method according to claim 40, wherein the substrate is separated using laser.

44. The method according to claim 40, wherein the active layer includes a multiple quantum well.

45. The method according to claim 40, wherein the substrate includes sapphire.

46. The method according to claim 40, wherein the first electrode includes aluminum.

47-57. -57. (canceled)

59-63. -63. (canceled)