Layer fill for homogenous technology processing
First Claim
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1. A semiconductor device, comprising:
- a workpiece, the workpiece comprising a first region and a second region;
a plurality of first transistors disposed in the first region of the workpiece, the plurality of first transistors comprising functioning devices, at least a portion of one of the first transistors having a width comprising a first dimension; and
a plurality of second transistors disposed in the second region of the workpiece, the plurality of second transistors comprising non-functioning devices, wherein each of the plurality of second transistors is spaced apart from a first transistor by a second dimension, wherein the second dimension comprises about five times the first dimension or less.
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Abstract
Spare transistors are formed in regions of a semiconductor device where functional transistors are not formed, providing uniformity in etch and polishing processes, and resulting in transistors with more uniform parameters on the semiconductor device. The spare transistors may not be electrically connected to other components on the device, or alternatively, the spare transistors may be connected to other components for use as spare transistors, for example. The gates of the spare transistors provide a homogeneous gate material layer, resulting in improved etch, polishing, and lithography processes for the semiconductor device.
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Citations
27 Claims
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1. A semiconductor device, comprising:
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a workpiece, the workpiece comprising a first region and a second region;
a plurality of first transistors disposed in the first region of the workpiece, the plurality of first transistors comprising functioning devices, at least a portion of one of the first transistors having a width comprising a first dimension; and
a plurality of second transistors disposed in the second region of the workpiece, the plurality of second transistors comprising non-functioning devices, wherein each of the plurality of second transistors is spaced apart from a first transistor by a second dimension, wherein the second dimension comprises about five times the first dimension or less. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device, comprising:
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a plurality of functional transistor gates formed in a first region of a workpiece, each of the plurality of functional transistor gates having a width comprising a first dimension; and
at least one non-functional transistor gate formed in a second region of the workpiece proximate the first region, the at least one non-functional transistor gate having a width comprising substantially the first dimension, wherein the non-functional transistor gate is disposed apart from the functional transistor gates by a dimension equal to or less than about five times the first dimension. - View Dependent Claims (8, 9, 10, 11)
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12. A method of manufacturing a semiconductor device, the method comprising:
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providing a workpiece, the workpiece comprising a first region and a second region;
forming a plurality of first transistors in the first region of the workpiece, the plurality of first transistors comprising functioning devices, at least a portion of one of the first transistors having a width comprising a first dimension; and
forming a plurality of second transistors in the second region of the workpiece, the plurality of second transistors comprising non-functioning devices, wherein each of the plurality of second transistors is spaced apart from a first transistor by a second dimension, wherein the second dimension comprises about five times the first dimension or less. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of designing a semiconductor device, the method comprising:
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determining a layout for a plurality of functional transistors, each of the plurality of functional transistors having at least one first gate, the layout having regions with no first gates disposed therein, each at least one first gate comprising a width comprising a first dimension; and
determining a layout for a plurality of non-functional transistors in the regions with no first gates disposed therein, each of the plurality of non-functional transistors comprising at least one second gate having substantially the same dimensions as the at least one first gate and being spaced apart from the plurality of functional transistors by a second dimension, the second dimension comprising about five times the first dimension or less. - View Dependent Claims (24, 25, 26, 27)
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Specification