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TRENCH PHOTODETECTOR

  • US 20060091489A1
  • Filed: 11/01/2004
  • Published: 05/04/2006
  • Est. Priority Date: 11/01/2004
  • Status: Active Grant
First Claim
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1. A method of forming a PIN photodetector having a set of p and n regions separated by a set of photon detector regions in a solid state wafer comprising the steps of:

  • Simultaneously forming two sets of deep trenches, separated by a set of photon detection regions, in said solid state wafer, one wide set of trenches being wider than the other narrow set, such that the wide set has a remaining central aperture when the narrower set is filled with a conformally deposited material;

    Filling the narrow trenches and conformally partially filling the wide trenches with a first material doped with a first type of dopant;

    Removing the first material from the wide trenches;

    Depositing a second material doped with a second (opposite) type of dopant of opposite polarity in the wide trenches;

    Annealing the wafer to drive the first and second types of dopants into the substrate to form the p and n regions of the PIN photodetector;

    Removing the first and second materials from both the wide and narrow trenches; and

    Filling both the wide and narrow trenches with the same forming conductive material connected to said p and n regions in both the wide and narrow trenches.

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