High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
First Claim
Patent Images
1. A method for seasoning a deposition chamber comprising:
- depositing one or more layers of one or more carbon-free materials on at least one internal surface of the chamber;
then transferring one or more substrates into the deposition chamber; and
then depositing one or more layers of one or more organo-silicon materials on at least one substrate in the chamber.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for seasoning a deposition chamber wherein the chamber components and walls are densely coated with a material that does not contain carbon prior to deposition of an organo-silicon material on a substrate. An optional carbon-containing layer may be deposited therebetween. A chamber cleaning method using low energy plasma and low pressure to remove residue from internal chamber surfaces is provided and may be combined with the seasoning process.
-
Citations
20 Claims
-
1. A method for seasoning a deposition chamber comprising:
-
depositing one or more layers of one or more carbon-free materials on at least one internal surface of the chamber;
thentransferring one or more substrates into the deposition chamber; and
thendepositing one or more layers of one or more organo-silicon materials on at least one substrate in the chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method for seasoning a deposition chamber comprising:
-
cleaning the chamber with a plasma;
depositing one or more layers of one or more carbon-free, silicon-containing materials on at least one internal surface of the chamber; and
depositing one or more layers of one or more organo-silicon materials on at least one substrate in the chamber. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
-
-
16. A method for cleaning a deposition chamber comprising:
-
providing one or more etchant gases to the chamber;
providing plasma excitation to at least one of the one or more etchant gases, wherein the plasma energy is generated at an energy level of about 100 W to about 250 W and the pressure in the chamber pressure is less than about 3 Torr. - View Dependent Claims (17, 18, 19, 20)
-
Specification