Atomic layer deposition of noble metals

• US 20060093848A1
• Filed: 10/15/2003
• Published: 05/04/2006
• Est. Priority Date: 10/15/2002
• Status: Abandoned Application

• Current Assignee: John Joseph Senkevich, Toh-Ming Lu
• Original Assignee: John Joseph Senkevich, Toh-Ming Lu
• Inventors: Lu, Toh-Ming, Senkevich, John Joseph
• Application Number:
  US10/531,245
• Publication Number:
  US 20060093848A1
• Time in Patent Office: Days
• US Class Current: 428/585
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: Y10T 428/12285 Single taper [e.g., ingot, etc.]

Abstract

The present invention relates to ALD processes for deposition of a metal selected from Pd, Rh, Ru, Pt and Ir wherein a layer including the metal is formed on a surface composed of a material selected from W, Ta, Cu, Ni, Co, Fe, Mn, Cr, V Nb, tungsten nitride, tantalum nitride, titanium nitride, dielectrics and activated dielectrics at a temperature ranging from >60° C. to <260° C. The layer is formed by sequentially pulsing into a chamber containing the surface a precursor for the metal and a reducing gas selected from hydrogen, glyoxylic acid, oxalic acid, formaldehyde, 2-propanol, imidazole and plasma-activated hydrogen.

Claims

1. An ALD process for deposition of a metal selected from Pd, Rh, Ru, Pt and Ir comprising forming a layer comprising the metal on a surface comprising a material selected from W, Ta, Cu, Ni, Co, Fe, Mn, Cr, V Nb, tungsten nitride, tantalum nitride, titanium nitride, dielectrics and activated dielectrics at a temperature ranging from >

60°

C. to <

260°

C.

2. An ALD process according to claim 1, wherein forming a layer comprises sequentially pulsing into a chamber containing the surface a precursor for the metal and a reducing gas selected from hydrogen, glyoxylic acid, oxalic acid, formaldehyde, 2-propanol, imidazole and plasma-activated hydrogen.

13. An ALD process according to claim 1, wherein the precursor is a metal β

-diketonate compound.

14. An ALD process according to claim 1, wherein the precursor is a metal-hfac compound.

15. An ALD process according to claim 1, wherein the precursor is selected from Pd(hfac)₂, Ru(hfac)₂, Rh(hfac)₂, Pt(hfac)₂, Ir(hfac)₂, Ir(acac)₂, Pd(tmhd)₂, Ru(tmhd)₂, Rh(tmhd)₂, Pt(tmhd)₂, and Ir(tmhd)₂.

16. An ALD process according to claim 1, wherein the metal is Pd.

17. An ALD process according to claim 1, wherein the precursor is Pd(hfac)₂.

3. An ALD process for deposition of a metal selected from Pd, Rh, Ru, Pt and Ir comprising

providing a surface comprising a material selected from noble metals, W, Ta, TaN, tungsten nitride, tantalum nitride, titanium nitride, Cu, Ni, Co, Fe, Mn, Cr, V and Nb in a reaction chamber;

pulsing a precursor for the metal into the chamber at a temperature ranging from >

60°

C. to <

260°

C.; and

pulsing hydrogen gas into the chamber.

4. An ALD process according to claim 3 wherein the surface is a noble metal.

5. An ALD process according to claim 3 wherein the surface is a pretreated metallic surface selected from W, Ta, tungsten nitride, tantalum nitride, and titanium nitride.

6. An ALD process according to claim 3 wherein the surface is a metal selected from Cu, Ni, Co, Fe, Mn, Cr, V and Nb.

7. An ALD process for deposition of a metal selected from Pd, Rh, Ru, Pt and Ir comprising

providing a surface comprising a material selected from noble metals, W, Ta, Cu, Ni, Co, Fe, Mn, Cr, V Nb, tungsten nitride, tantalum nitride, titanium nitride, dielectrics and activated dielectrics in a reaction chamber at a temperature ranging from >

60°

C. to <

260°

C.;

pulsing a precursor for the metal into the chamber; and

pulsing into the chamber a reducing gas selected from glyoxylic acid, oxalic acid, formaldehyde, 2-propanol, and imidazole.

8. An ALD process according to claim 7 wherein the reducing gas is glyoxylic acid.

9. An ALD process according to claim 7 wherein the activated dielectric surface comprises at least one of thiol, sulfide, tetrasulfide, phosphine, phosphide or amine groups.

10. An ALD process according to claim 7 wherein the activated dielectric surface comprises thiol groups.

11. An ALD process according to claim 7 wherein the dielectric is selected from CVD polymers, organic-inorganic hybrids, and silicon or metals having an oxide-terminated surface.

12. An ALD process for deposition of a metal selected from Pd, Rh, Ru, Pt and Ir comprising

providing a substrate in a reaction chamber;

pulsing a precursor for the metal into the chamber at a temperature ranging from >

60°

C. to <

260°

C.; and

pulsing plasma-activated hydrogen gas into the chamber.