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Method for treating base oxide to improve high-K material deposition

  • US 20060094192A1
  • Filed: 01/31/2005
  • Published: 05/04/2006
  • Est. Priority Date: 10/29/2004
  • Status: Abandoned Application
First Claim
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1. A method for forming a high-K material layer in a semiconductor device fabrication process comprising the steps of:

  • providing a substrate;

    treating said substrate with an aqueous basic solution; and

    , depositing at least one high-K material layer over said substrate.

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