Light-emitting device having optical resonance layer

• US 20060097264A1
• Filed: 11/09/2005
• Published: 05/11/2006
• Est. Priority Date: 11/10/2004
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung SDI Company Limited
• Inventors: Oh, Jong-Seok, Cho, Sang-Hwan, Ahn, Ji-Hoon, Ha, Jae-Heung, Lee, Joon-Gu, Lee, So-Young, Kim, Yoon-Chang, Song, Young-Woo
• Granted Patent: US 8,525,154 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: H01L 33/465 with a resonant cavity structure
• CPC Class Codes: H10K 50/852 comprising a resonant cavity structure, e.g. Bragg reflector pair
• CPC Class Codes: H10K 59/10 OLED displays
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels

Abstract

Provided is a light-emitting device which has a simple structure and can be manufactured in a simple process, has increased light coupling efficiency and brightness, and can reduce adverse effects of optical resonance on a view angle and emission spectrum. The light-emitting device includes a substrate; a light-emitting diode formed on the substrate; and an optical resonance layer formed outside the light-emitting diode that induces resonance of light emitted from the light-emitting diode.

Claims

1. A light-emitting device comprising:

a substrate;

a light-emitting diode arranged on the substrate;

an optical resonance layer separate from the light-emitting diode and inducing resonance of light emitted from the light-emitting diode; and

an interlayer arranged between the optical resonance layer and the light-emitting diode.

2. The light-emitting device of claim 1, wherein the optical resonance layer comprises a first layer and a second layer, the first layer being arranged between the second layer and the light-emitting diode, and the second layer having a higher refractive index than the first layer

3. The light-emitting device of claim 2, wherein the second layer has a higher refractive index than the first layer by 0.2 or more.

4. The light-emitting device of claim 2, wherein the first layer has a refractive index in the range of 1 to 1.6.

5. The light-emitting device of claim 2, wherein the first layer comprises nano porous silica, siloxane, magnesium fluoride, calcium fluoride, Teflon, silica aero gel, or silicon oxide.

6. The light-emitting device of claim 2, wherein the second layer has a refractive index in the range of 1.6 to 2.3.

7. The light-emitting device of claim 2, wherein the second layer comprises silicon nitride, titanium oxide, hafnium dioxide, niobium oxide, tantalum oxide, antimony oxide, synthetic polymer, or benzocylobutene (BCB).

8. The light-emitting device of claim 2, wherein the interlayer is composed of a denser material than the first layer.

9. The light-emitting device of claim 2, wherein the interlayer has a refractive index in the range of 1.3 to 2.3.

10. The light-emitting device of claim 2, wherein the interlayer comprises Ormocer, silicon oxide, benzocylobutene (BCB), or silicon nitride.

11. The light-emitting device of claim 2, wherein:

the light-emitting diode comprises a pair of electrodes opposing each other and a light-emitting layer arranged between the electrodes,

one electrode of the pair of electrodes comprises a reflective layer that reflects light emitted from the light-emitting layer, and

the optical resonance layer opposes the reflective layer with the light-emitting layer arranged therebetween.

12. The light-emitting device of claim 11, satisfying equation 1:

t1=(nλ

)/2  

 

(1)

wherein

t1 is a distance from a reflection interface of the reflective layer to an interface between the first layer and the second layer;

n is a positive integer; and

λ

is a wavelength of light emitted from the light-emitting layer.

13. The light-emitting device of claim 12, wherein t1 is controlled by adjusting a thickness of at least one of the first layer and the interlayer.

14. The light-emitting device of claim 11, satisfying equation 2:

t2=(2n+1)λ

/4  

 

(2)

wherein

t2 is a distance from a reflection interface of the reflective layer to an outer surface of the second layer;

n is a positive integer; and

λ

is a wavelength of light emitted from the light-emitting layer.

15. The light-emitting device of claim 14, wherein t2 is controlled by adjusting a thickness of the second layer.

16. The light-emitting device of claim 1, wherein the optical resonance layer comprises a first layer having a refractive index in the range of 1 to 1.6, and the interlayer has a refractive index in the range of 1.3 to 2.3.

17. The light-emitting device of claim 16, wherein the first layer comprises nano porous silica, siloxane, magnesium fluoride, calcium fluoride, Teflon, silica aero gel, or silicon oxide.

18. The light-emitting device of claim 16, wherein the interlayer comprises Ormocer, silicon oxide, benzocylobutene (BCB), or silicon nitride.

19. The light-emitting device of claim 16, wherein:

the light-emitting diode comprises a pair of electrodes opposing each other and a light-emitting layer arranged between the electrodes,

one electrode of the pair of electrodes comprises a reflective layer that reflects light emitted from the light-emitting layer, and

the optical resonance layer opposes the reflective layer with the light-emitting layer arranged therebetween.

20. The light-emitting device of claim 19, satisfying equation 3:

t3=(nλ

)/2  

 

(3)

wherein

t3 is a distance from a reflection interface of the reflective layer to an outer surface of the first layer;

n is a positive integer; and

λ

is a wavelength of light emitted from the light-emitting layer.

21. The light-emitting device of claim 20, wherein t3 is controlled by adjusting a thickness of at least one of the first layer and the interlayer.

22. The light-emitting device of claim 1, wherein the substrate comprises at least one thin film transistor electrically connected with the light-emitting diode.

23. The light-emitting device of claim 1, wherein the light-emitting diode comprises red, green, and blue pixels comprising red, green, and blue light-emitting layers, respectively, and the optical resonance layer has a different thickness for each of the red, green, and blue pixels.

24. The light-emitting device of claim 1, wherein the light-emitting diode is an organic light-emitting diode.

25. The light-emitting device of claim 1, wherein the light-emitting diode is an inorganic light-emitting diode.

26. A light-emitting device comprising:

a substrate;

a light-emitting diode arranged on the substrate;

an optical resonance layer arranged between the light-emitting diode and the substrate and inducing resonance of light emitted from the light-emitting diode; and

an interlayer arranged between the optical resonance layer and the light-emitting diode.

27. The light-emitting device of claim 26, wherein the optical resonance layer comprises a first layer and a second layer, from the first layer being arranged between the second layer and the light-emitting diode, and the second layer having a higher refractive index than the first layer.

28. The light-emitting device of claim 27, wherein the second layer has a higher refractive index than the first layer by 0.2 or more.

29. The light-emitting device of claim 27, wherein the first layer has a refractive index in the range of 1 to 1.6.

30. The light-emitting device of claim 27, wherein the first layer comprises nano porous silica, siloxane, magnesium fluoride, calcium fluoride, Teflon, silica aero gel, or silicon oxide.

31. The light-emitting device of claim 27, wherein the second layer has a refractive index in the range of 1.6 to 2.3.

32. The light-emitting device of claim 27, wherein the second layer comprises silicon nitride, titanium oxide, hafnium dioxide, niobium oxide, tantalum oxide, antimony oxide, synthetic polymer, or benzocylobutene (BCB).

33. The light-emitting device of claim 27, wherein the interlayer is composed of a denser material than the first layer.

34. The light-emitting device of claim 27, wherein the interlayer has a refractive index in the range of 1.3 to 2.3.

35. The light-emitting device of claim 27, wherein the interlayer comprises Ormocer, silicon oxide, benzocylobutene (BCB), or silicon nitride.

36. The light-emitting device of claim 27, wherein:

the light-emitting diode comprises a pair of electrodes opposing each other and a light-emitting layer arranged between the electrodes,

one electrode of the pair of electrodes comprises a reflective layer that reflects light emitted from the light-emitting layer, and

the optical resonance layer opposes the reflective layer with the light-emitting layer arranged therebetween.

37. The light-emitting device of claim 36, satisfying equation 4:

t4=(nλ

)/2  

 

(4)

wherein

t4 is a distance from a reflection interface of the reflective layer to an interface between the first layer and the second layer;

n is a positive integer; and

λ

is a wavelength of light emitted from the light-emitting layer.

38. The light-emitting device of claim 37, wherein t4 is controlled by adjusting a thickness of at least one of the first layer and the interlayer.

39. The light-emitting device of claim 36, satisfying equation 5:

t5=(2n+1)λ

/4  

 

(5)

wherein

t5 is a distance from a reflection interface of the reflective layer to an outer surface of the second layer;

n is a positive integer; and

λ

is a wavelength of light emitted from the light-emitting layer.

40. The light-emitting device of claim 39, wherein t5 is controlled by adjusting a thickness of the second layer.

41. The light-emitting device of claim 26, wherein the optical resonance layer comprises a first layer having a refractive index in the range of 1 to 1.6, and the interlayer has a refractive index in the range of 1.3 to 2.3.

42. The light-emitting device of claim 41, wherein the first layer comprises nano porous silica, siloxane, magnesium fluoride, calcium fluoride, Teflon, silica aero gel, or silicon oxide.

43. The light-emitting device of claim 41, wherein the interlayer comprises Ormocer, silicon oxide, benzocylobutene (BCB), or silicon nitride.

44. The light-emitting device of claim 41, wherein:

the light-emitting diode comprises a pair of electrodes opposing each other and a light-emitting layer arranged between the electrodes,

one electrode of the pair of electrodes comprises a reflective layer that reflects light emitted from the light-emitting layer, and

the optical resonance layer opposes the reflective layer with the light-emitting layer arranged therebetween.

45. The light-emitting device of claim 44, satisfying equation 6:

t6=(nλ

)/2  

 

(6)

wherein

t6 is a distance from a reflection interface of the reflective layer to an outer surface of the first layer;

n is a positive integer; and

λ

is a wavelength of light emitted from the light-emitting layer.

46. The light-emitting device of claim 45, wherein t6 is controlled by adjusting a thickness of at least one of the first layer and the interlayer.

47. The light-emitting device of claim 26, wherein the substrate comprises at least one thin film transistor electrically connected with the light-emitting diode.

48. The light-emitting device of claim 26, wherein the light-emitting diode comprises red, green, and blue pixels comprising red, green, and blue light-emitting layers, respectively, and the optical resonance layer has a different thickness for each of the red, green, and blue pixels.

49. The light-emitting device of claim 26, wherein the light-emitting diode is an organic light-emitting diode.

50. The light-emitting device of claim 26, wherein the light-emitting diode is an inorganic light-emitting diode.

51. A light-emitting device comprising:

a substrate;

a light-emitting diode arranged on the substrate;

an optical resonance layer arranged on the light-emitting diode and inducing resonance of light emitted from the light-emitting diode; and

an interlayer arranged between the optical resonance layer and the light-emitting diode.

52. The light-emitting device of claim 51, wherein the optical resonance layer comprises a first layer and a second layer, the first layer being arranged between the second layer and the light-emitting diode, and the second layer having a higher refractive index than the first layer.

53. The light-emitting device of claim 52, wherein the second layer has a higher refractive index than the first layer by 0.2 or more.

54. The light-emitting device of claim 52, wherein the first layer has a refractive index in the range of 1 to 1.6.

55. The light-emitting device of claim 52, wherein the first layer comprises nano porous silica, siloxane, magnesium fluoride, calcium fluoride, Teflon, silica aero gel, or silicon oxide.

56. The light-emitting device of claim 52, wherein the second layer has a refractive index in the range of 1.6 to 2.3.

57. The light-emitting device of claim 52, wherein the second layer comprises silicon nitride, titanium oxide, hafnium dioxide, niobium oxide, tantalum oxide, antimony oxide, synthetic polymer, or benzocylobutene (BCB).

58. The light-emitting device of claim 52, wherein the interlayer is composed of a denser material than the first layer.

59. The light-emitting device of claim 52, wherein the interlayer has a refractive index in the range of 1.3 to 2.3.

60. The light-emitting device of claim 52, wherein the interlayer comprises Ormocer, silicon oxide, benzocylobutene (BCB), or silicon nitride.

61. The light-emitting device of claim 52, wherein:

the light-emitting diode comprises a pair of electrodes opposing each other and a light-emitting layer arranged between the electrodes,

one electrode of the pair of electrodes comprises a reflective layer that reflects light emitted from the light-emitting layer, and

the optical resonance layer opposes the reflective layer with the light-emitting layer arranged therebetween.

62. The light-emitting device of claim 61, satisfying equation 7:

t7=(nλ

)/2  

 

(7)

wherein

t7 is a distance from a reflection interface of the reflective layer to an interface between the first layer and the second layer;

n is a positive integer; and

λ

is a wavelength of light emitted from the light-emitting layer.

63. The light-emitting device of claim 62, wherein t7 is controlled by adjusting a thickness of at least one of the first layer and the interlayer.

64. The light-emitting device of claim 61, satisfying equation 8:

t8=(2n+1)λ

/4  

 

(8)

wherein

t8 is a distance from a reflection interface of the reflective layer to a bottom surface of the second layer;

n is a positive integer; and

λ

is a wavelength of light emitted from the light-emitting layer.

65. The light-emitting device of claim 64, wherein t8 is controlled by adjusting a thickness of the second layer.

66. The light-emitting device of claim 61, wherein the optical resonance layer comprises a first layer having a refractive index in the range of 1 to 1.6, and the interlayer has a refractive index in the range of 1.3 to 2.3.

67. The light-emitting device of claim 66, wherein the first layer comprises nano porous silica, siloxane, magnesium fluoride, calcium fluoride, Teflon, silica aero gel, or silicon oxide.

68. The light-emitting device of claim 66, wherein the interlayer comprises Ormocer, silicon oxide, benzocylobutene (BCB), or silicon nitride.

69. The light-emitting device of claim 66, wherein:

the light-emitting diode comprises a pair of electrodes opposing each other and a light-emitting layer arranged between the electrodes,

one electrode of the pair of electrodes comprises a reflective layer that reflects light emitted from the light-emitting layer, and

the optical resonance layer opposes the reflective layer with the light-emitting layer arranged therebetween.

70. The light-emitting device of claim 69, satisfying equation 9:

t9=(nλ

)/2  

 

(9)

wherein

t9 is a distance from a reflection interface of the reflective layer to an outer surface of the first layer;

n is a positive integer; and

λ

is a wavelength of light emitted from the light-emitting layer.

71. The light-emitting device of claim 70, wherein t9 is controlled by adjusting a thickness of at least one of the first layer and the interlayer.

72. The light-emitting device of claim 51, wherein the substrate comprises at least one thin film transistor electrically connected with the light-emitting diode.

73. The light-emitting device of claim 51, wherein the light-emitting diode comprises red, green, and blue pixels comprising red, green, and blue light-emitting layers, respectively, and the optical resonance layer has a different thickness for each of the red, green, and blue pixels.

74. The light-emitting device of claim 51, wherein the light-emitting diode is an organic light-emitting diode.

75. The light-emitting device of claim 51, wherein the light-emitting diode is an inorganic light-emitting diode.