Gan-based radiation-emitting thin-layered semiconductor component

US 20060097271A1
Filed: 06/20/2003
Published: 05/11/2006
Est. Priority Date: 07/31/2002
Status: Active Grant

First Claim

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1. A radiation-emitting thin-film semiconductor component with a multilayer structure (12) based on GaN, which contains an active, radiation-generating layer (14) and has a first main area (16) and a second main area (18)—

remote from the first main area—

for coupling out the radiation generated in the active, radiation-generating layer, wherein the first main area (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main area (18) of the multilayer structure is patterned one- or two-dimensionally.

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Abstract

A radiation-emitting thin-film semiconductor component with a multilayer structure (12) based on GaN, which contains an active, radiation-generating layer (14) and has a first main area (16) and a second main area (18)—remote from the first main area—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main area (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main area (18) of the multilayer structure is patterned one- or two-dimensionally.

Citations

32 Claims

1. A radiation-emitting thin-film semiconductor component with a multilayer structure (12) based on GaN, which contains an active, radiation-generating layer (14) and has a first main area (16) and a second main area (18)—
- remote from the first main area—
  
  for coupling out the radiation generated in the active, radiation-generating layer, wherein the first main area (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main area (18) of the multilayer structure is patterned one- or two-dimensionally.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
- - 2. The semiconductor component as claimed in claim 1, wherein the region (22) of the multilayer structure that adjoins the second main area (18) of the multilayer structure (12) has convex elevations (26).
  - 3. The semiconductor component as claimed in claim 2, wherein the elevations (26) have the form of truncated pyramids or truncated cones or a trapezoidal cross-sectional form.
  - 4. The semiconductor component as claimed in claim 2, wherein the elevations (26) have the form of cones or a triangular cross-sectional form.
  - 5. The semiconductor component as claimed in claim 2, wherein the elevations (26) have the form of sphere segments or a circle segment cross-sectional form.
  - 6. The semiconductor component as claimed in claim 2, wherein the elevations (26) have an aperture angle (α
    - ) of between approximately 30° and
      
      approximately 70°
      
      .
  - 7. The semiconductor component as claimed in claim 6, wherein the elevations (26) have an aperture angle (α
    - ) of between approximately 40° and
      
      approximately 50°
      
      .
  - 8. The semiconductor component as claimed in claim 2, wherein the height (h1) of the elevations (26) is at least as large as the height (h2) of a plane region (20) of the multilayer structure (12) between the active, radiation-generating layer (14) and the elevations.
  - 9. The semiconductor component as claimed in claim 8, wherein the height (h1) of the elevations (26) is approximately twice as large as the height (h2) of the plane region (20) of the multilayer structure between the active, radiation-generating layer and the elevations.
  - 10. The semiconductor component as claimed in claim 2, wherein a grid dimension (d) of the elevations (26) is at most approximately five times as large as the height (h1) of the elevations.
  - 11. The semiconductor component as claimed in claim 10, wherein the grid dimension (d) of the elevations is at most approximately three times as large as the height (h1) of the elevations.
  - 12. The semiconductor component as claimed in claim 1, wherein the layer (28) or interface coupled to the first main area (16) of the multilayer structure (12) has a degree of reflection of at least 70%.
  - 13. The semiconductor component as claimed in claim 1, wherein the layer (28) or interface coupled to the first main area (16) of the multilayer structure (12) has a degree of reflection of at least 85%.
  - 14. The semiconductor component as claimed claim 1, wherein the multilayer structure (12) is applied by its first main area (16) directly or via a reflective layer (28) on a carrier substrate (30).
  - 15. The semiconductor component as claimed in claim 14, wherein the reflective layer or the carrier substrate also serves as a contact area of the semiconductor component.
  - 16. The semiconductor component as claimed claim 1, wherein a conductive, transparent layer is applied on the second main area (18) of the multilayer structure (12).
  - 17. The semiconductor component as claimed in claim 1, wherein a transparent protective layer (32) is applied on the second main area (18) of the multilayer structure (12).

18. A radiation-emitting thin-film semiconductor component with a multilayer structure (12) based on GaN, which contains an active, radiation-generating layer (14) and has a first main area (16) and a second main area (18)—
- remote from the first main area—
  
  for coupling out the radiation generated in the active, radiation-generating layer, wherein the first main area (16) of the multilayer structure (12) is coupled to a reflective layer (28) or interface, and a transparent layer (32) is provided between the first main area (16) of the multilayer structure and the reflective layer or interface, said transparent layer being patterned one- or two-dimensionally.
- View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
- - 19. The semiconductor component as claimed in claim 18, wherein the transparent layer (34) is conductive.
  - 20. The semiconductor component as claimed in claim 18, wherein the transparent layer (34) between the first main area (16) of the multilayer structure (12) and the reflective layer (28) or interface has convex elevations (26′
    - ).
  - 21. The semiconductor component as claimed in claim 20, wherein the elevations (26′
    - ) have the form of truncated pyramids or truncated cones or a trapezoidal cross-sectional form.
  - 22. The semiconductor component as claimed in claim 20, wherein the elevations (26′
    - ) have an aperture angle (α
      
      ) of between approximately 30° and
      
      approximately 70°
      
      .
  - 23. The semiconductor component as claimed in claim 20, wherein the elevations (26′
    - ) have an aperture angle (α
      
      ) of between approximately 40° and
      
      approximately 50°
      
      .
  - 24. The semiconductor component as claimed in claim 20, wherein the height (h1) of the elevations (26′
    - ) is at least as large as the height (h2) of a plane region (35) of the multilayer structure (12) between the active, radiation-generating layer (14) and the elevations.
  - 25. The semiconductor component as claimed in claim 24, wherein the height (h1) of the elevations (26′
    - ) is approximately twice as large as the height (h2) of the plane region (35) of the multilayer structure between the active, radiation-generating layer and the elevations.
  - 26. The semiconductor component as claimed in claim 20, a grid dimension (d) of the elevations (26′
    - ) is at most approximately five times as large as the height (h1) of the elevations.
  - 27. The semiconductor component as claimed in claim 26, wherein the grid dimension (d) of the elevations is at most approximately three times as large as the height (h1) of the elevations.
  - 28. The semiconductor component as claimed in claim 18, wherein the layer or interface coupled to the first main area (16) of the multilayer structure (12) has a degree of reflection of at least 70%.
  - 29. The semiconductor component as claimed in claim 28, wherein the layer or interface coupled to the first main area (16) of the multilayer structure (12) has a degree of reflection of at least 85%.
  - 30. The semiconductor component as claimed in claim 18, wherein the reflective layer (28) is applied on a carrier substrate (30) or the reflective interface is formed by a carrier substrate (30).
  - 31. The semiconductor component as claimed in claim 30, wherein the reflective layer or the carrier substrate also serves as a contact area of the semiconductor component.
  - 32. The semiconductor component as claimed in claim 18, wherein a transparent protective layer is applied on the second main area (18) of the multilayer structure (12).

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Current Assignee
OSRAM OLED GMBH (Ams-Osram AG)
Original Assignee
Osram Opto Semiconductors GmbH (Ams-Osram AG)
Inventors
Hahn, Berthold, Eisert, Dominik, Harle, Volker

Granted Patent

US 7,943,944 B2
Time in Patent Office

Days
Field of Search
US Class Current

257/91
CPC Class Codes

H01L 33/20 with a particular shape, e....

H01L 33/32 containing nitrogen

Gan-based radiation-emitting thin-layered semiconductor component

First Claim

3 Assignments

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Accused Products

Abstract

Citations

32 Claims

Specification

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Gan-based radiation-emitting thin-layered semiconductor component

First Claim

3 Assignments

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0 Petitions

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Accused Products

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Abstract

Citations

32 Claims

Specification

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