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Gan-based radiation-emitting thin-layered semiconductor component

  • US 20060097271A1
  • Filed: 06/20/2003
  • Published: 05/11/2006
  • Est. Priority Date: 07/31/2002
  • Status: Active Grant
First Claim
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1. A radiation-emitting thin-film semiconductor component with a multilayer structure (12) based on GaN, which contains an active, radiation-generating layer (14) and has a first main area (16) and a second main area (18)—

  • remote from the first main area—

    for coupling out the radiation generated in the active, radiation-generating layer, wherein the first main area (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main area (18) of the multilayer structure is patterned one- or two-dimensionally.

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