High light efficiency of GaN-series of light emitting diode and its manufacturing method thereof
0 Assignments
0 Petitions
Accused Products
Abstract
A high light efficiency of GaN-series of light emitting diode and its manufacturing method thereof disclose a process and structure of a p-type semiconductor layer of surface texture structure generation. The optical waveguide effect can be interrupted and the possibility of hexagonal shaped pits defect generated can be reduced through said texture structure. The method explores that controlling the tension and compression of strain while a p-type cladding layer and a p-type transition layer are generated, and then a p-type ohmic contact is formed on said p-type transition layer. Through the control and its structure of said epitaxial growth process, the surface of said p-type semiconductor layer is with texture structure to increase external quantum efficiency and its operation life.
-
Citations
33 Claims
-
1-17. -17. (canceled)
-
18. A manufacturing of light emitting diode comprising the steps of:
-
providing a substrate; and
forming a semiconductor layer on said substrate to be a light emitting device, wherein said semiconductor layer at least containing a light emitting layer, a p-type semiconductor layer and a n-type semiconductor, and said light emitting layer is between the said n-type semiconductor layer and the p-type semiconductor layer;
wherein forming of said p-type semiconductor comprises the steps of;
forming a p-type cladding layer on said light emitting layer, wherein said p-type cladding layer has an increase of strain in proportion to each layer;
forming a p-type transition layer on said p-type cladding layer; and
forming a p-type ohmic contact layer on said p-type transition layer. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 33)
-
-
30. The manufacturing method in accordance with 20 or 23 or 27, wherein the interruption time is in a range of from one second to two minutes.
-
31. The manufacturing method in accordance with 21 or 24 or 28, wherein the change temperature is in a range of from 5°
- to 300°
.
- to 300°
-
32. The manufacturing method in accordance with 22 or 25 or 29, wherein the monolayer in is in a range of from one to five.
Specification