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Gate dielectric antifuse circuits and methods for operating same

  • US 20060097345A1
  • Filed: 12/02/2005
  • Published: 05/11/2006
  • Est. Priority Date: 08/31/2000
  • Status: Abandoned Application
First Claim
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1. A transistor comprising:

  • a p-type halo in a source side of a p-type substrate;

    an n-type lightly doped drain in the halo;

    an n+-type source diffusion region in the lightly doped drain; and

    an n+-type drain diffusion region in a drain side of the substrate.

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