Semiconductor package with conductive molding compound and manufacturing method thereof

• US 20060097404A1
• Filed: 10/25/2005
• Published: 05/11/2006
• Est. Priority Date: 11/11/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Hee-Seok, Cho, Byeong-Yeon, Jang, Kyung-Lae
• Granted Patent: US 7,374,969 B2
• Time in Patent Office: Days
• US Class Current: 257/782
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48599 Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/78 Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 2224/85913 Plasma cleaning
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/92 Specific sequence of method steps
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/85 using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/06 : Polymers
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

The present invention relates to a semiconductor package having a conductive molding compound to prevent static charge accumulation. By using a conductive molding compound heat conductivity is also increased and heat generated by the semiconductor chip is more effectively dissipated externally. Additionally, the conductive compound blocks electromagnetic waves making possible an optimal semiconductor package satisfying the electromagnetic compatibility (EMC) and increasing the reliability of the semiconductor chip especially when processing high-speed signals.

Claims

1. A method of manufacturing a semiconductor package, comprising the steps of:

(A) providing a substrate having an insulating substrate, substrate pads on the insulating substrate, and ball pads electrically connected to the substrate pads;

(B) forming through holes by piercing the substrate and filling the through holes with conductive lines formed of a first conductive material;

(C) mounting a semiconductor chip on the substrate, and electrically connecting chip pads on the semiconductor chip to the substrate pads via connecting means;

(D) applying an insulation coating layer onto the chip pads, the substrate pads, and the connecting means;

(E) sealing the semiconductor chip, the connecting means, and the conductive lines with a conductive molding compound containing a second conductive material to electrically connect a first end of each conductive line to the conductive molding compound; and

(F) forming solder balls on the ball pads and a second end of each conductive line for external electrical connections.

2. The method of claim 1, wherein the through holes are formed by laser beam machining.

3. The method of claim 1, wherein the first conductive material includes at least one of copper (Cu) and aluminum (Al).

4. The method of claim 1, wherein the connecting means are bonding wires formed of gold.

5. The method of claim 1, wherein after at least one of forming through holes and mounting a semiconductor chip, a protection tape is attached to seal one end of each conductive line, facing towards the semiconductor chip, and wherein the protection tape is removed after applying an insulation coating layer.

6. The method of claim 5, wherein the insulation coating layer includes a PI coating layer formed of polyimide.

7. The method of claim 5, wherein applying an insulation coating layer includes sealing the chip pads, the substrate pads, and the connecting means by spraying an insulation coating solution thereon.

8. The method of claim 5, wherein applying an insulation coating layer further includes, immersing the chip pads, the substrate pads, and the connecting means in a solution in a B-stage state.

9. The method of claim 1, wherein the insulation coating layer includes a PI coating layer formed of polyimide.

10. The method of claim 1, wherein applying an insulation coating layer includes sealing the chip pads, the substrate pads, and the connecting means with an insulation coating layer by spraying an insulation coating solution thereon.

11. The method of claim 1, wherein applying an insulation coating layer further includes immersing the chip pads, the substrate pads, and the connecting means in a solution in B-stage state.

12. The method of claim 1, wherein the second conductive material includes at least one of copper (Cu), gold (Au), silver (Ag), aluminum (Al), nickel (Ni), and chromium (Cr).

13. A semiconductor package comprising:

a substrate having an insulating substrate, substrate pads formed on the insulating substrate, and ball pads electrically connected to the substrate pads;

a semiconductor chip having chip pads, attached to the substrate;

connecting means electrically connecting the substrate pads to the chip pads;

a sealant adapted to seal the semiconductor chip and the connecting means; and

conductive balls formed on the ball pads,

wherein the chip pads, the substrate pads, and the connecting means are coated with an insulation coating layer, and the sealant is a conductive molding compound containing a third conductive material, and the conductive molding compound is electrically connected to the conductive balls via conductive lines formed of a fourth conductive material.

14. The package of claim 13, wherein the connecting means are bonding wires formed of gold (Au).

15. The package of claim 13, wherein the insulation coating layer is a PI coating layer formed of polyimide.

16. The package of claim 13, wherein the third conductive material includes at least one of copper (Cu), gold (Au), silver (Ag), aluminum (Al), nickel (Ni), and chromium (Cr).

17. The package of claim 13, wherein the fourth conductive material includes at least one of copper (Cu) and aluminum (Al).

18. The package of claim 17, wherein the conductive lines are formed by piercing the substrate.

19. The package of claim 18, wherein a first end of each conductive line facing toward the semiconductor chip is electrically connected to the sealant.

20. The package of claim 19, wherein the conductive balls are formed on a second end of each conductive line to provide and external electrical connection.

21. The package of claim 13, wherein the conductive lines are formed by piercing the substrate.

22. An integrated circuit package comprising:

an integrated circuit;

a circuit substrate, the integrated circuit having a first surface portion attached to a first surface of the circuit substrate, the circuit substrate having at least one conductive path coupling the first surface thereof and a second surface thereof; and

a conductive sealant enclosing remaining portions of the integrated circuit and portions of the first surface of the circuit substrate surrounding the integrated circuit, the conductive sealant being electrically coupled to the conductive path.

23. An integrated circuit package according to claim 22, wherein the at least one conductive path comprises a through hole coupling the first and second sides of the circuit substrate.

24. The package according to claim 23, wherein the at least one conductive path further comprises conductive material within the through hole.

25. The package according to claim 24, wherein the at least one conductive path electrically couples to an external terminal of the package.

26. The package according to claim 25, wherein the external terminal is a ground terminal.

27. The package according to claim 24, wherein the at least one conductive path comprises at least one of copper (Cu), gold (Au), silver (Ag), aluminum (Al), nickel (Ni), and chrome (Cr).

28. The package according to claim 22, wherein the integrated circuit includes pad elements and the package further comprises electrically non-conductive elements interposed between the pad elements and the electrically conductive sealant.

29. The package according to claim 28, wherein the electrically non-conductive elements comprise a polyimide.

30. An integrated circuit package including a sealant surrounding an integrated circuit, the package comprising:

a conductive element mixed into the sealant to make the sealant conductive.

31. The package according to claim 30, wherein the package further comprises a conductive path electrically coupling the sealant to an external terminal of the package.

32. The package according to claim 31, wherein the package includes a circuit substrate, the integrated circuit being mounted upon a first surface of the circuit substrate, the conductive path electrically coupling the first surface and the second surface of the circuit substrate.

33. The package according to claim 31, wherein the external terminal is a ground terminal of the package.

34. The package according to claim 30, wherein the package further comprises electrically non-conductive material interposed between conductive portions of the integrated circuit and the sealant.

35. The package according to claim 34, wherein the conductive elements of the integrated circuit comprise pads.

36. The package according to claim 35, wherein the package further comprises wire elements electrically coupled to the pads, the electrically non-conductive material being interposed between the wires and the conductive sealant.

37. The package according to claim 30, wherein the conductive element comprises at least one of copper (Cu), gold (Au), silver (Ag), aluminum (Al), nickel (Ni), and chrome (Cr).

38. A method of forming an integrated circuit package comprising:

enclosing an integrated circuit within an electrically conductive sealant; and

electrically isolating the integrated circuit relative to the sealant.

39. The method according to claim 38, further comprising electrically coupling the sealant relative to an external terminal of the package.

40. The method according to claim 39, wherein the external terminal is a ground terminal.

41. The method according to claim 39, wherein electrically isolating comprises application of a polyimide prior to enclosing the integrated circuit.

42. The method according to claim 38, wherein electrically isolating includes applying electrically non-conductive material to pads of the integrated circuit.

43. The method according to claim 42, wherein electrically isolating further includes applying the electrically non-conductive material to wires coupled to the pads of the integrated circuit.

44. The method according to claim 42, wherein the electrically non-conductive material comprises a polyimide.

45. The method according to claim 38, wherein enclosing an integrated circuit comprises enclosing the integrated circuit in an epoxy intermixed with an electrically conductive material.

46. The method according to claim 45, wherein the electrically conductive material comprises at least one of one of copper (Cu), gold (Au), silver (Ag), aluminum (Al), nickel (Ni), and chrome (Cr).