Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory
First Claim
1. A magnetoresistive element comprising:
- a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction;
a magnetization free layer a magnetization direction of which varies depending on an external field; and
a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, wherein, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding to each crystal grain is formed on a region of the crystal grain in a range between 20 and 80 of the in-plane position.
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Accused Products
Abstract
A magnetoresistive element has a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction, a magnetization free layer a magnetization direction of which varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, in which, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding the crystal grain is formed on a region in a range between 20 and 80 of the in-plane position.
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Citations
19 Claims
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1. A magnetoresistive element comprising:
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a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction;
a magnetization free layer a magnetization direction of which varies depending on an external field; and
a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, wherein, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding to each crystal grain is formed on a region of the crystal grain in a range between 20 and 80 of the in-plane position. - View Dependent Claims (2, 3, 4, 5, 6, 7, 17, 18, 19)
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8. A magnetoresistive element comprising:
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a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction;
a magnetization free layer a magnetization direction of which varies depending on an external field; and
a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, wherein each of the current paths is formed on a region at least 3 nm away from ends of each of the crystal grains contained in the magnetization pinned layer or magnetization free layer located under the spacer layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A magnetoresistive element comprising:
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a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction;
a magnetization free layer a magnetization direction of which varies depending on an external field; and
a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, wherein dispersion of a crystal orientation angle of each of the current paths is at most 50. - View Dependent Claims (16)
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Specification