Plasma implantation using halogenated dopant species to limit deposition of surface layers

• US 20060099830A1
• Filed: 11/05/2004
• Published: 05/11/2006
• Est. Priority Date: 11/05/2004
• Status: Abandoned Application

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Scheuer, Jay T., Walther, Steven R., Mehta, Sandeep
• Application Number:
  US10/981,831
• Publication Number:
  US 20060099830A1
• Time in Patent Office: Days
• US Class Current: 438/790
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01L 21/263 with high-energy radiation H01L21/261 takes precedence
• CPC Class Codes: H01L 21/26506 in group IV semiconductors

Abstract

Methods and apparatus for plasma implantation of a workpiece, such as a semiconductor wafer, are provided. A method includes introducing into a plasma doping chamber a dopant gas selected from the group consisting of PF₃, AsF₃, AsF₅ and mixtures thereof, forming in the plasma doping chamber a plasma containing ions of the dopant gas, the plasma having a plasma sheath at or near a surface of the workpiece, and accelerating the dopant gas ions across the plasma sheath toward the workpiece, wherein the dopant gas ions are implanted into the workpiece. The selected dopant gas limits deposition of neutral particles on the workpiece.

Claims

1. A method for plasma implantation of a workpiece, comprising:

introducing into a plasma doping chamber a dopant gas selected from the group consisting of PF₃, AsF₃, AsF₅ and mixtures thereof;

forming in the plasma doping chamber a plasma containing ions of the dopant gas, the plasma having a plasma sheath at or near a surface of the workpiece; and

accelerating the dopant gas ions across the plasma sheath toward the workpiece, wherein the dopant gas ions are implanted into the workpiece.

2. A method as defined in claim 1, wherein introducing a dopant gas comprises introducing PF_3.

3. A method as defined in claim 1, wherein introducing a dopant gas comprises introducing AsF_3.

4. A method as defined in claim 1, wherein introducing a dopant gas comprises introducing AsF_5.

5. A method as defined in claim 1, further comprising placing a semi-conductor wafer in the plasma doping chamber for plasma implantation with the dopant gas ions.

6. A method as defined in claim 1, wherein introducing a dopant gas further comprises introducing a dilution gas selected to remove a deposited surface layer from the workpiece.

7. A method for plasma implantation of a workpiece, comprising:

introducing into a plasma doping chamber a dopant gas selected to limit deposition of neutral particles on the workpiece;

forming in the plasma doping chamber a plasma containing ions of the dopant gas, the plasma having a sheath at or near a surface of the workpiece; and

accelerating the dopant gas ions across the plasma sheath toward the workpiece, wherein the dopant gas ions are implanted into the workpiece.

8. A method as defined in claim 7, wherein introducing a dopant gas comprises introducing a halogen-containing species of phosphorous or arsenic.

9. A method as defined in claim 7, wherein introducing a dopant gas comprises introducing a dopant gas selected from the group consisting of PF₃, AsF₃, AsF₅ and mixtures thereof.

10. A method as defined in claim 7, further comprising placing a semiconductor wafer in the plasma doping chamber for plasma implantation with dopant gas ions.

11. A method as defined in claim 7, wherein introducing a dopant gas further comprises introducing a dilution gas selected to remove a deposited surface layer from the workpiece.

12. A method for plasma implantation of a substrate, comprising;

selecting a dopant gas to limit deposition of neutralized particles on the substrate;

introducing the selected dopant gas into a plasma doping chamber;

forming in the plasma doping chamber a plasma containing ions of the dopant gas, the plasma having a plasma sheath at or near a surface of the workpiece; and

accelerating the dopant gas ions across the plasma sheath toward the substrate, wherein the dopant gas ions are implanted into the substrate.

13. A method as defined in claim 12, wherein selecting a dopant gas comprises selecting a halogen-containing species of phosphorous or arsenic.

14. A method as defined in claim 12, wherein selecting a dopant gas comprises selecting a dopant gas from the group consisting of PF₃, AsF₃, and AsF₅ and mixtures thereof.

15. A method as defined in claim 12, further comprising placing a semiconductor wafer in the plasma doping chamber for plasma implantation with the dopant gas ions.

16. A method as defined in claim 12, wherein introducing the selected dopant gas further comprises introducing a dilution gas selected to remove a deposited surface layer from the workpiece.

17. Plasma doping apparatus comprising:

a plasma doping chamber;

a platen located in said plasma doping chamber for supporting a workpiece;

a process gas source coupled to said plasma doping chamber for introducing into said plasma doping chamber a dopant gas selected from the group consisting of PF₃, AsF₃, AsF₅ and mixtures thereof;

a plasma source coupled to said plasma doping chamber for producing a plasma containing ions of the dopant gas; and

a pulse source for accelerating the dopant gas ions from the plasma toward the workpiece, wherein the dopant gas ions are implanted into the workpiece.

18. Plasma doping apparatus comprising:

a plasma doping chamber;

a platen located in said plasma doping chamber for supporting a workpiece;

an anode spaced from said platen in said plasma doping chamber;

a process gas source coupled to said plasma doping chamber for introducing into said plasma doping chamber a dopant gas selected from the group consisting of PF₃, AsF₃, AsF₅ and mixtures thereof, wherein a plasma containing ions of the dopant gas is produced in a plasma discharge region between said anode and said platen; and

a pulse source for applying pulses between said platen and said anode for accelerating the dopant gas ions from the plasma toward the workpiece, wherein the dopant gas ions are implanted into the workpiece.