System for removing a residue from a substrate using supercritical carbon dioxide processing
First Claim
1. A film removal system for cleaning a substrate containing a micro-feature having a residue thereon, the system comprising:
- a supercritical fluid processing system comprising a process chamber and a carbon dioxide supply system, and configured for generating a supercritical carbon dioxide cleaning solution, for treating the substrate in the process chamber with the supercritical carbon dioxide cleaning solution to remove residue from the micro-feature, and for maintaining the supercritical carbon dioxide cleaning solution at a temperature between about 35°
C. and about 80°
C. during the treating;
an ozone generator configured for providing an ozone processing environment for treating the substrate; and
a controller configured for controlling the supercritical fluid processing system and the ozone generator.
1 Assignment
0 Petitions
Accused Products
Abstract
A film removal system for cleaning a substrate containing a micro-feature having a residue thereon. The film removal system includes a supercritical fluid processing system configured for treating the substrate witha supercritical carbon dioxide cleaning solution to remove the residue from the micro-feature, and for maintaining the supercritical carbon dioxide solution at a temperature between about 35° C. and about 80° C. during the treating. The film removal system further includes an ozone generator configured for providing an ozone processing environment for treating the substrate either prior to treating with the supercritical cleaning solution or concurrently therewith, and a controller configured for controlling the ozone generator and the supercritical fluid processing system.
-
Citations
26 Claims
-
1. A film removal system for cleaning a substrate containing a micro-feature having a residue thereon, the system comprising:
-
a supercritical fluid processing system comprising a process chamber and a carbon dioxide supply system, and configured for generating a supercritical carbon dioxide cleaning solution, for treating the substrate in the process chamber with the supercritical carbon dioxide cleaning solution to remove residue from the micro-feature, and for maintaining the supercritical carbon dioxide cleaning solution at a temperature between about 35°
C. and about 80°
C. during the treating;
an ozone generator configured for providing an ozone processing environment for treating the substrate; and
a controller configured for controlling the supercritical fluid processing system and the ozone generator. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A film removal system for cleaning a substrate containing a micro-feature having a residue thereon, the system comprising:
-
a supercritical fluid processing system comprising a process chamber, a carbon dioxide supply system and a cleaning chemical supply system, wherein the supercritical fluid processing system is configured for generating a supercritical carbon dioxide cleaning solution, for treating the substrate in the process chamber with the supercritical carbon dioxide cleaning solution to remove residue from the micro-feature, and for maintaining the supercritical carbon dioxide cleaning solution at a temperature between about 35°
C. and about 80°
C. during the treating;
an ozone processing system operatively coupled to the supercritical fluid processing system and comprising an ozone process chamber and an ozone generator configured for providing an ozone processing environment to the ozone process chamber for pre-treating the substrate prior to treating the substrate in the supercritical fluid processing system;
a substrate transfer system coupling the ozone process chamber to the process chamber of the supercritical fluid processing system and configured for transferring a substrate therebetween; and
a controller configured for controlling the supercritical fluid processing system and the ozone processing system. - View Dependent Claims (16, 17, 18, 19, 20, 21)
-
-
22. A film removal system for cleaning a substrate containing a micro-feature having a residue thereon, the system comprising:
-
a supercritical fluid processing system comprising;
a process chamber, a carbon dioxide supply system, a cleaning chemical supply system, and an ozone generator configured for providing an ozone processing environment to the process chamber, wherein the supercritical fluid processing system is configured for pre-treating the substrate in the process chamber with the ozone processing environment, for generating a supercritical carbon dioxide cleaning solution, for treating the substrate in the process chamber with the supercritical carbon dioxide cleaning solution to remove residue from the micro-feature, and for maintaining the supercritical carbon dioxide cleaning solution at a temperature between about 35°
C. and about 80°
C. during the treating; and
a controller configured for controlling the supercritical fluid processing system and the ozone generator. - View Dependent Claims (23, 24, 25, 26)
-
Specification