System for removing a residue from a substrate using supercritical carbon dioxide processing

• US 20060102208A1
• Filed: 11/12/2004
• Published: 05/18/2006
• Est. Priority Date: 11/12/2004
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Palmer, Bentley, Jacobson, Gunilla
• Application Number:
  US10/987,676
• Publication Number:
  US 20060102208A1
• Time in Patent Office: Days
• US Class Current: 134/56.R
• CPC Class Codes: B08B 7/0021 by liquid gases or supercritical fluids
• CPC Class Codes: C23G 5/00 Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
• CPC Class Codes: G03F 7/427 using plasma means only
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture
• CPC Class Codes: H01L 21/02101 only involving supercritical fluids

Abstract

A film removal system for cleaning a substrate containing a micro-feature having a residue thereon. The film removal system includes a supercritical fluid processing system configured for treating the substrate witha supercritical carbon dioxide cleaning solution to remove the residue from the micro-feature, and for maintaining the supercritical carbon dioxide solution at a temperature between about 35° C. and about 80° C. during the treating. The film removal system further includes an ozone generator configured for providing an ozone processing environment for treating the substrate either prior to treating with the supercritical cleaning solution or concurrently therewith, and a controller configured for controlling the ozone generator and the supercritical fluid processing system.

Claims

1. A film removal system for cleaning a substrate containing a micro-feature having a residue thereon, the system comprising:

a supercritical fluid processing system comprising a process chamber and a carbon dioxide supply system, and configured for generating a supercritical carbon dioxide cleaning solution, for treating the substrate in the process chamber with the supercritical carbon dioxide cleaning solution to remove residue from the micro-feature, and for maintaining the supercritical carbon dioxide cleaning solution at a temperature between about 35°

C. and about 80°

C. during the treating;

an ozone generator configured for providing an ozone processing environment for treating the substrate; and

a controller configured for controlling the supercritical fluid processing system and the ozone generator.

2. The film removal system according to claim 1, wherein the supercritical fluid processing system further comprises a circulation system for circulating the supercritical carbon dioxide cleaning solution within the supercritical fluid processing system.

3. The film removal system according to claim 2, wherein the supercritical fluid processing system further comprises a chemical supply system for introducing a cleaning chemical into the circulation system to form the supercritical carbon dioxide cleaning solution.

4. The film removal system according to claim 3, wherein the chemical supply system comprises a peroxide source, an acid source, or both.

5. The film removal system according to claim 3, wherein the chemical supply system comprises an organic solvent source, and wherein the supercritical fluid processing system is further configured for rinsing the treated substrate with a supercritical carbon dioxide rinsing solution containing organic solvent.

6. The film removal system according to claim 3, wherein the carbon dioxide supply system is coupled to the circulation system.

7. The film removal system according to claim 1, wherein the carbon dioxide supply system is coupled to the processing chamber.

8. The film removal system according to claim 1, wherein the ozone generator is configured to provide an ozone processing environment containing a process pressure of between about 5 psig and about 100 psig.

9. The film removal system according to claim 1, further comprising an ozone processing system operatively coupled to the supercritical fluid processing system and comprising an ozone process chamber and the ozone generator for pre-treating the substrate prior to treating the substrate in the supercritical fluid processing system.

10. The film removal system according to claim 9, wherein the ozone generator is located within the ozone process chamber for generating the ozone processing environment therein.

11. The film removal system according to claim 9, wherein the ozone generator is located outside the ozone process chamber for generating the ozone processing environment remotely, and is coupled to the ozone process chamber for flowing the ozone processing environment into the ozone process chamber.

12. The film removal system according to claim 9, further comprising a substrate transfer system coupling the ozone process chamber to the process chamber of the supercritical fluid processing system for transferring the substrate therebetween.

13. The film removal system according to claim 1, wherein the ozone generator is coupled to the process chamber of the supercritical fluid processing system and configured to generate the ozone processing environment within the process chamber for treating the substrate in the process chamber with both the ozone processing environment and the supercritical carbon dioxide cleaning solution.

14. The film removal system according to claim 13, wherein the supercritical fluid processing system is configured to pre-treat the substrate in the process chamber with the ozone processing environment, and subsequently treat the substrate with the supercritical carbon dioxide cleaning solution.

15. A film removal system for cleaning a substrate containing a micro-feature having a residue thereon, the system comprising:

a supercritical fluid processing system comprising a process chamber, a carbon dioxide supply system and a cleaning chemical supply system, wherein the supercritical fluid processing system is configured for generating a supercritical carbon dioxide cleaning solution, for treating the substrate in the process chamber with the supercritical carbon dioxide cleaning solution to remove residue from the micro-feature, and for maintaining the supercritical carbon dioxide cleaning solution at a temperature between about 35°

C. and about 80°

C. during the treating;

an ozone processing system operatively coupled to the supercritical fluid processing system and comprising an ozone process chamber and an ozone generator configured for providing an ozone processing environment to the ozone process chamber for pre-treating the substrate prior to treating the substrate in the supercritical fluid processing system;

a substrate transfer system coupling the ozone process chamber to the process chamber of the supercritical fluid processing system and configured for transferring a substrate therebetween; and

a controller configured for controlling the supercritical fluid processing system and the ozone processing system.

16. The film removal system according to claim 15, wherein the ozone generator is located within the ozone process chamber for generating the ozone processing environment therein.

17. The film removal system according to claim 15, wherein the ozone generator is located outside the ozone process chamber for generating the ozone processing environment remotely, and is coupled to the ozone process chamber for flowing the ozone processing environment into the ozone process chamber.

18. The film removal system according to claim 15, wherein the ozone generator is configured to provide an ozone processing environment containing a process pressure of between about 5 psig and about 100 psig.

19. The film removal system according to claim 15, wherein the supercritical fluid processing system further comprises a circulation system for circulating the supercritical carbon dioxide cleaning solution within the supercritical fluid processing system.

20. The film removal system according to claim 15, wherein the cleaning chemical supply system comprises a peroxide source, an acid source, or both.

21. The film removal system according to claim 15, wherein the cleaning chemical supply system comprises an organic solvent source, and wherein the supercritical fluid processing system is further configured for rinsing the treated substrate with a supercritical carbon dioxide rinsing solution containing organic solvent.

22. A film removal system for cleaning a substrate containing a micro-feature having a residue thereon, the system comprising:

a supercritical fluid processing system comprising;

a process chamber,

a carbon dioxide supply system,

a cleaning chemical supply system, and

an ozone generator configured for providing an ozone processing environment to the process chamber,

wherein the supercritical fluid processing system is configured for pre-treating the substrate in the process chamber with the ozone processing environment, for generating a supercritical carbon dioxide cleaning solution, for treating the substrate in the process chamber with the supercritical carbon dioxide cleaning solution to remove residue from the micro-feature, and for maintaining the supercritical carbon dioxide cleaning solution at a temperature between about 35°

C. and about 80°

C. during the treating; and

a controller configured for controlling the supercritical fluid processing system and the ozone generator.

23. The film removal system according to claim 22, wherein the ozone generator is configured to provide an ozone processing environment containing a process pressure of between about 5 psig and about 100 psig.

24. The film removal system according, to claim 22, wherein the supercritical fluid processing system further comprises a circulation system for circulating the supercritical carbon dioxide cleaning solution within the supercritical fluid processing system.

25. The film removal system according to claim 22, wherein the cleaning chemical supply system comprises a peroxide source, an acid source, or both.

26. The film removal system according to claim 22, wherein the cleaning chemical supply system comprises an organic solvent source, and wherein the supercritical fluid processing system is further configured for rinsing the treated substrate with a supercritical carbon dioxide rinsing solution containing organic solvent.