Method for etching chromium thin film and method for producing photomask
First Claim
1. A method of etching a chromium-based thin film, the method being for processing an object comprising the chromium-based thin film made of a material containing chromium, the thin film being etched using a resist pattern as a mask, the thin film being etched by the use of a chemical species produced by preparing a dry etching gas containing a halogen-containing gas and an oxygen-containing gas and supplying a plasma excitation power to the dry etching gas to thereby excite plasma, wherein:
- the thin film is etched using, as the plasma excitation power, a power lower than a plasma excitation power at which plasma density jump occurs.
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Accused Products
Abstract
An object to be processed has a chromium-based thin film made of a material containing chromium. The thin film is etched using a resist pattern as a mask. The thin film is etched by the use of a chemical species produced by preparing a dry etching gas containing a halogen-containing gas and an oxygen-containing gas and supplying a plasma excitation power to the dry etching gas to thereby excite plasma. The thin film is etched using, as the plasma excitation power, a power lower than a plasma excitation power at which plasma density jump occurs.
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Citations
20 Claims
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1. A method of etching a chromium-based thin film, the method being for processing an object comprising the chromium-based thin film made of a material containing chromium, the thin film being etched using a resist pattern as a mask, the thin film being etched by the use of a chemical species produced by preparing a dry etching gas containing a halogen-containing gas and an oxygen-containing gas and supplying a plasma excitation power to the dry etching gas to thereby excite plasma, wherein:
the thin film is etched using, as the plasma excitation power, a power lower than a plasma excitation power at which plasma density jump occurs. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 17, 18, 19, 20)
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9. A method of etching a chromium-based thin film, the method being for processing an object comprising the chromium-based thin film made of a material containing chromium, the thin film being etched using a resist pattern as a mask, the thin film being etched by the use of a chemical species produced by preparing a dry etching gas containing a halogen-containing gas and an oxygen-containing gas and supplying a plasma excitation power to the dry etching gas to thereby excite plasma, wherein:
the thin film is etched in presence of an organic substance other than the resist pattern while supplying at least a part of the chemical species to the thin film in a direction perpendicular to the thin film, so that the thin film is etched while an organic product is deposited on a side wall of the resist layer being etched by an isotropic etching component. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
Specification