Semiconductor integrated circuit device
First Claim
1. A semiconductor integrated circuit device comprising plural flip-flops, plural logic circuits connected to output nodes of the plural flip-flops and first, second and third power lines, wherein:
- the flip-flops each comprise a first latch circuit including an output node which is connected with the output node of the flip-flop and a second latch circuit including an input node which is connected with the output node or an input node of the first latch circuit, an operation voltage for the first latch circuit and the logic circuit is supplied from the first and the second power lines, an operation voltage for the second latch circuit is supplied from the first and the third power lines, the first and the second power lines each have a first wiring resistance, the third power line has a second wiring resistance, a wiring for connecting the input node of the second latch circuit and the output node or input node of the first latch circuit has a third wiring resistance, and a difference between the first wiring resistance and the second wiring resistance is smaller than a difference between the second wiring resistance and the third wiring resistance.
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Accused Products
Abstract
In a low power consumption mode in which prior data is retained upon power shutdown, the return speed thereof is increased. While use of an existent data retaining flip-flop may be considered, this is not preferred since it increases area overhead such as enlargement of the size of a cell. A power line for data retention for power shutdown is formed with wirings finer than a usual main power line. Preferably, power lines for a data retention circuit are considered as signal lines and wired by automatic placing and mounting. For this purpose, terminals for the power line for data retention are previously designed by providing the terminals therefor for the cell in the same manner as in the existent signal lines. Additional layout for power lines is no longer necessary for the cell, which enables a decrease in the area and design by an existent placing and routing tool.
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Citations
22 Claims
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1. A semiconductor integrated circuit device comprising plural flip-flops, plural logic circuits connected to output nodes of the plural flip-flops and first, second and third power lines, wherein:
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the flip-flops each comprise a first latch circuit including an output node which is connected with the output node of the flip-flop and a second latch circuit including an input node which is connected with the output node or an input node of the first latch circuit, an operation voltage for the first latch circuit and the logic circuit is supplied from the first and the second power lines, an operation voltage for the second latch circuit is supplied from the first and the third power lines, the first and the second power lines each have a first wiring resistance, the third power line has a second wiring resistance, a wiring for connecting the input node of the second latch circuit and the output node or input node of the first latch circuit has a third wiring resistance, and a difference between the first wiring resistance and the second wiring resistance is smaller than a difference between the second wiring resistance and the third wiring resistance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor integrated circuit device comprising:
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a first well of a first conductivity type extending in a first direction, a second well of a second conductivity type disposed adjacent with the first well and extending in the first direction, a first power line, disposed at an upper layer for the first well, extending in the first direction, for supplying a first potential, a second power line, disposed at an upper layer for the second well, extending in the first direction and disposed in a layer identical with the first power line, for supplying a second potential, a first CMOS circuit including a first MISFET of a second conductivity type formed at the first well and a second MISFET of a first conductivity type formed at the second well, and a second CMOS circuit including a third MISFET of a second conductivity type formed at the first well and a fourth MISFET of a first conductivity type formed at the second well, in which;
a source potential for the first MISFET of the first CMOS circuit is supplied by the first power line, and a source potential for the second MISFET of the first CMOS circuit is supplied by the second power line, a source potential for the third MISFET of the second CMOS circuit is supplied by the first power line, and a source potential for the fourth MISFET is supplied by the third power line, and the third power line is present in the layer identical with or below the first power line and the second power line, and has a portion in which a difference between a resistance thereof and a resistance of the first power line or the second power line is smaller than a difference of a resistance between the first power line and the second power line. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A semiconductor integrated circuit device comprising a logic circuit block having plural flip-flops and plural logic circuits connected with the plural flip-flops and having a first operation mode and a second operation mode, and a clock generation circuit for generating clock signals to be supplied to the logic circuit block, in which the flip-flops each comprise:
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a first latch circuit including an output node which is connected with an output node of the flip-flop, a second latch circuit including an input node which is connected with an input node or the output node of the first latch circuit and a transfer gate disposed between an input node of the flip-flop and the input node of the first latch circuit, wherein a first operation voltage is supplied to the first latch circuit and the logic circuit and a second operation voltage is supplied to the second latch circuit, wherein the clock generation circuit supplies clock signals to the transfer gate in the first operation mode, wherein, when supply of the first operation voltage to the first latch circuit and the logic circuit is stopped, the second operation voltage is supplied to the second latch circuit and the clock generation circuit stops supply of the clock signal to the transfer gate in the second operation mode, wherein the transfer gate is turned off for a predetermined period upon transition from the second operation mode to the first operation mode, after the first operation voltage for the first latch circuit of the flip-flop arrives at a predetermined level, and before starting the supply of the clock signal to the transfer gate, wherein data of the second latch circuit is written back to the first latch circuit for the predetermined period of time, wherein the first operation voltage is supplied from the first and second power lines, wherein the second operation voltage is supplied from the first power line and the third power line, wherein the first power line has a first wiring resistance, wherein the second power line has a second wiring resistance, wherein the third power line has a third wiring resistance, and wherein a difference between the first wiring resistance and the third wiring resistance is smaller than a difference between the first wiring resistance and the second wiring resistance. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification