Semiconductor device structure and fabrication process

• US 20060102975A1
• Filed: 10/19/2005
• Published: 05/18/2006
• Est. Priority Date: 11/18/2004
• Status: Active Grant

• Current Assignee: LAPIS Semiconductor Co., Ltd. (ROHM Co., Ltd.)
• Original Assignee: Oki Semiconductor Company Limited (ROHM Co., Ltd.)
• Inventors: Nakamura, Toshiyuki, Machida, Satoshi, Taguchi, Takashi, Yabe, Sachiko
• Granted Patent: US 7,745,880 B2
• Time in Patent Office: Days
• US Class Current: 257/435
• CPC Class Codes: H01L 21/86 the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS

Abstract

A semiconductor device has a transparent dielectric substrate such as a sapphire substrate. To enable fabrication equipment to detect the presence of the substrate optically, the back surface of the substrate is coated with a triple-layer light-reflecting film, preferably a film in which a silicon oxide or silicon nitride layer is sandwiched between polycrystalline silicon layers. This structure provides high reflectance with a combined film thickness of less than half a micrometer.

Claims

1. A semiconductor device having a dielectric substrate transparent to light, the dielectric substrate having a pair of major surfaces, one major surface being a front surface and the other major surface being a back surface, the semiconductor device comprising:

a first film of a first material that reflects light, disposed on the back surface of the dielectric substrate;

a second film of a second material that reflects light, disposed on the first film, the second material differing from the first material; and

a third film of a third material that reflects light, disposed on the second film.

2. The semiconductor device of claim 1, wherein the second film has a lower refractive index than the first and third films.

3. The semiconductor device of claim 1, wherein the first, second, and third films have a combined thickness of less than 0.5 μ

m.

4. The semiconductor device of claim 1, wherein the first film comprises polysilicon, the second film comprises silicon oxide, and the third film comprises polysilicon.

5. The semiconductor device of claim 4, wherein the first film has a thickness of substantially 42 nm, the second film has a thickness of substantially 110 nm, and the third film has a thickness of substantially 42 nm.

6. The semiconductor device of claim 5, wherein the dielectric substrate includes sapphire, the semiconductor device further comprising:

a fourth film disposed on the front surface of the dielectric substrate, the fourth film including silicon; and

a fifth film disposed on the fourth film, the fifth film including silicon oxide.

7. The semiconductor device of claim 1, wherein the first film comprises polysilicon, the second film comprises silicon nitride, and the third film comprises polysilicon.

8. The semiconductor device of claim 7, wherein the first film has a thickness of substantially 42 nm, the second film has a thickness of substantially 80 nm, and the third film has a thickness of substantially 42 nm.

9. The semiconductor device of claim 1, wherein the dielectric substrate comprises a sapphire substrate.

10. The semiconductor device of claim 1, further comprising a fourth film disposed on the front surface of the dielectric substrate.

11. The semiconductor device of claim 10, wherein the fourth film comprises silicon.

12. The semiconductor device of claim 10, further comprising a fifth film disposed on the fourth film.

13. The semiconductor device of claim 12, wherein the fourth film comprises silicon and the fifth film comprises silicon oxide.

14. The semiconductor device of claim 1, wherein the dielectric substrate has side surfaces and a sixth film covering at least the side surfaces.

15. The semiconductor device of claim 14, wherein the sixth film comprises polysilicon and silicon nitride.

16. The semiconductor device of claim 14, wherein the sixth film also covers the back surface of the dielectric substrate, being disposed between said back surface and the first film.

17. The semiconductor device of claim 1, the semiconductor device being fabricated from a wafer, wherein during fabrication of the semiconductor device, the first film, the second film, and the third film reflect wafer sensing light for detection of the wafer.