Device comprising doped nano-component and method of forming the device

• US 20060105513A1
• Filed: 05/26/2005
• Published: 05/18/2006
• Est. Priority Date: 11/18/2004
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Afzali-Ardakani, Ali, Kagan, Cherie R., Talapin, Dmitri V., Murray, Christopher B., Sandstrom, Robert L.
• Granted Patent: US 7,405,129 B2
• Time in Patent Office: Days
• US Class Current: 438/197
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/78684 having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys H01L29/7869 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 2102/331 Nanoparticles used in non-emissive layers, e.g. in packaging layer
• CPC Class Codes: H10K 85/225 comprising substituents
• CPC Class Codes: Y10S 977/938 Field effect transistors, FETS, with nanowire- or nanotube-channel region

Abstract

A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.

Claims

1. A method of forming a FET, comprising:

(a) providing a gate on a substrate;

(b) forming a gate dielectric on the gate;

(c) forming a source over a first portion of the gate dielectric;

(d) forming a drain over a second portion of the gate dielectric;

(e) providing a channel between the source and the drain, the channel comprising a semiconductor nano-component selected from one of nanocrystal film, nanotube and nanowire; and

(f) exposing at least a portion of the semiconductor nano-component to a dopant selected from the group of hydrazine, mono-, di-, tri- or tetra-kis trimethylsilylhydrazine, a hydrazine derivative, diazobicycloundecane and polyaniline.

2. The method of claim 1, wherein the semiconductor nano-component comprises at least one element of Groups III, IV, V and VI.

3. The method of claim 1, wherein the semiconductor nano-component comprises at least one of Si, Ge, Sn, Se, Te, B, P, As, Sb, Bi, AlN, AlP, AlAs, AlSb, GaAs, GaP, GaSb, InN, InP, InAs, InSb, In₂O₃, In₂S₃, In₂Se₃, In₂Te₃, CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, SnO, SnS, SnSe, SnTe, HgS, HgSe, HgTe, GeS, GeSe, GeTe, PbO, PbS, PbSe, PbTe, Sb₂S₃, Sb₂Se₃, Sb₂Te₃ and combinations thereof.

4. The method of claim 1, wherein the semiconductor nano-component is one of PbSe nanowire and PbSe nanocrystal film.

5. The method of claim 4, wherein the dopant is hydrazine.

6. The method of claim 4, wherein the hydrazine derivative has a chemical formula RHN—

NH₂, where R represents one of alkyl-, aryl-, subsituted alkyl-, and substituted aryl-groups.

7. The method of claim 4, wherein the dopant is provided in a solution having a dopant concentration between about 0.01M to about 5M and a temperature between about 10°

C. to about 50°

C.

8. The method of claim 4, wherein the channel comprises at least one PbSe nanowire formed by a method comprising:

(e1) providing a first solution having a Pb-containing species and a selenium-containing species at a first temperature;

(e2) providing a second solution at a second temperature;

(e3) injecting the first solution into the second solution to form a third solution, thereby forming PbSe nanocrystals; and

(e4) maintaining the third solution at a third temperature for a predetermined time.

9. The method of claim 8, wherein the second temperature is higher than the first temperature, and the third temperature is sufficiently high to allow PbSe nanocrystals formed in the step (e3) to assemble into PbSe nanowires.

10. The method of claim 8, wherein the first solution contains lead oleate and trioctylphosphine selenide at a first temperature of about 60°

C., and the second solution contains at least one of phenyl ether, octyl ether and trioctylamine at a second temperature of between about 170°

C. to about 300°

C.

11. The method of claim 1, wherein the step (e) comprises:

(e5) providing a drop of solution containing nanowires over the source and drain;

(e6) applying a voltage across the source and drain whereby at least one nanowire is positioned between the source and the drain;

(e7) removing nanowires not positioned between the source and the drain by rinsing the substrate containing the gate, gate dielectric, source and drain in a solvent.

12. The method of claim 1, further comprises, prior to step (e):

forming a self-assembled monolayer of a material on at least one of the gate dielectric, the source and the drain,

exposing at least one of the self-assembled layer, gate dielectric, source and drain to a solution containing the semiconductor nano-component to deposit the semiconductor nano-component on regions predetermined by the self-assembled layer.

13. A FET comprising:

a gate;

a gate dielectric formed on the gate;

a source formed over a first portion of the gate dielectric;

a drain formed over a second portion of the gate dielectric; and

a channel comprising a PbSe nano-component formed on the gate dielectric between the source and the drain.

14. The FET of claim 13, wherein the PbSe nano-component is one of a PbSe nanotube, nanowire and nanocrystal film that has been doped by exposing the PbSe nano-component to a dopant selected from the group of hydrazine, mono-, di-, tri- or tetra-kis trimethylsilylhydrazine, a hydrazine derivative, diazobicycloundecane and polyaniline.

15. The FET of claim 14, wherein the PbSe nano-component is a PbSe nanocrystal film having a thickness between about 20 nm and about 100 nm.

16. The FET of claim 14, wherein the PbSe nano-component is a PbSe nanowire having a diameter of less than about 100 nm.

17. A method of forming a FET comprising the steps of:

(a) providing a gate on a substrate;

(b) forming a gate dielectric on the gate;

(c) providing a PbSe nano-component on the gate dielectric;

(d) forming a source on a first portion of the PbSe nano-component; and

(e) forming a drain on a second portion of the PbSe nano-component.

18. The method of claim 17, further comprising, after steps (d) and (e):

(f) exposing the substrate containing the PbSe nano-component to a dopant selected from the group of hydrazine, mono-, di-, tri- or tetra-kis trimethylsilylhydrazine, a hydrazine derivative, diazobicycloundecane and polyaniline.

19. The method of claim 17, wherein the PbSe nano-component is one of PbSe nanowire and a PbSe nanocrystal film.

20. A field-effect transistor (FET) compirsing:

a gate;

a gate dielectric formed on the gate;

a source;

a drain; and

a channel between the source and the drain, the channel comprising one of a nanowire, nanocrystal film and nanotube containing at least one of Si, Ge, Sn, Se, Te, B, P, As, Sb, Bi, AlN, AlP, AlAs, AlSb, GaAs, GaP, GaSb, InN, InP, InAs, InSb, In₂O₃, In₂S₃, In₂Se₃, In₂Te₃, CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, SnO, SnS, SnSe, SnTe, HgS, HgSe, HgTe, GeS, GeSe, GeTe, PbO, PbS, PbSe, PbTe, Sb₂S₃, Sb₂Se₃, Sb₂Te₃ and combinations thereof;

wherein at least a portion of the nanowire, nanocrystal film and nanotube is doped by exposing to a solution containing a dopant selected from the group of hydrazine, mono-, di-, tri- or tetra-kis trimethylsilylhydrazine, a hydrazine derivative, diazobicycloundecane and polyaniline.