High Q factor integrated circuit inductor
First Claim
1. A method of forming an inductor, comprising:
- (a) forming a dielectric layer on a top surface of a substrate;
after step (a), (b) forming a lower trench in said dielectric layer;
after step (b), (c) forming a resist layer on a top surface of said dielectric layer;
after step (c), (d) forming an upper trench in said resist layer, said upper trench aligned to said lower trench, a bottom of said upper trench open to said lower trench; and
after step (d), (e) completely filling said lower trench and at least partially filling said upper trench with a conductor in order to form said inductor.
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Accused Products
Abstract
An inductor and a method of forming and the inductor, the method including: (a) forming a dielectric layer on a top surface of a substrate; (b) forming a lower trench in the dielectric layer; (c) forming a resist layer on a top surface of the dielectric layer; (d) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and (e) completely filling the lower trench at least partially filling the upper trench with a conductor in order to form the inductor. The inductor including a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending a fixed distance into a dielectric layer formed on a semiconductor substrate and an upper portion extending above said dielectric layer; and means to electrically contact said inductor.
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Citations
30 Claims
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1. A method of forming an inductor, comprising:
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(a) forming a dielectric layer on a top surface of a substrate;
after step (a), (b) forming a lower trench in said dielectric layer;
after step (b), (c) forming a resist layer on a top surface of said dielectric layer;
after step (c), (d) forming an upper trench in said resist layer, said upper trench aligned to said lower trench, a bottom of said upper trench open to said lower trench; and
after step (d), (e) completely filling said lower trench and at least partially filling said upper trench with a conductor in order to form said inductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming an inductor, comprising:
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(a) forming a dielectric layer on a top surface of a substrate;
after step (a), (b) forming a lower trench in said dielectric layer;
after step (b), (c) forming a conformal conductive liner in said lower trench and over a top surface of said dielectric layer;
after step (c), (d) forming a conformal Cu seed layer over said conductive liner;
after step (d), (e) forming a resist layer on said substrate;
after step (e), (f) forming an upper trench in said resist layer, said upper trench aligned to said lower trench, a bottom of said upper trench open to said lower trench;
after step (f), (g) electroplating Cu to completely fill said lower trench and at least partially fill said upper trench in order to form said inductor;
after step (g), (h) removing said resist layer;
after step (h), (i) selectively forming a conductive passivation layer over all exposed Cu surfaces; and
after step (i), (j) selectively removing said Cu seed layer from regions of said conductive liner overlying said surface of said dielectric layer and removing said conductive liner from said surface of said dielectric layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification