Apparatus for measuring a three-dimensional shape

• US 20060108526A1
• Filed: 12/30/2005
• Published: 05/25/2006
• Est. Priority Date: 06/13/2002
• Status: Active Grant

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Chie Shishido, Maki Tanaka, Yuji Takagi
• Inventors: Takagi, Yuji, Tanaka, Maki, Shishido, Chie
• Granted Patent: US 7,166,839 B2
• Time in Patent Office: Days
• US Class Current: 250/310
• CPC Class Codes: G01N 23/225 using electron or ion
• CPC Class Codes: G01N 23/2251 using incident electron beams, e.g. scanning electron microscopy [SEM]
• CPC Class Codes: H01J 2237/2814 Measurement of surface topography
• CPC Class Codes: H01J 37/244 Detectors; Associated components or circuits therefor
• CPC Class Codes: H01J 37/3171 for ion implantation plasma immersion ion implantation H01J37/32412
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 22/10 Measuring as part of the manufacturing process burn-in G01R31/2855
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process. According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained. The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.

Claims

1. An apparatus for measuring a three-dimensional shape, comprising:

an electron beam irradiation means for scanningly irradiating a specimen with a condensed electron beam;

a signal detecting means comprising a secondary electron detecting unit for detecting secondary electrons generated from said specimen upon irradiation with said electron beam; and

a signal computing means for computing a signal from said signal detecting means;

wherein said signal computing means has the function of dividing a signal waveform obtained by said signal detecting means into a plurality of regions based on variation in the signal amount, and evaluating the three-dimensional shape of said specimen according to the sizes of said divisional regions.

2. An apparatus for measuring a three-dimensional shape as set forth in claim 1, wherein said electron beam irradiation means irradiates the surface of said specimen with said electron beam from a plurality of directions by sequentially changing the angle of incidence, and said signal computing means evaluates said three-dimensional shape by use of a plurality of electron beam signals, said plurality of electron beam signals being associated with said plurality of incidence angles which are obtained by the detection by said signal detecting means of said secondary electrons generated from said surface of said specimen irradiated with said electron beam while sequentially changing said incidence angle by said electron beam irradiation means.

3. An apparatus for measuring a three-dimensional shape as set forth in claim 1, wherein said signal detecting means further comprises a backscattered electron detecting unit for detecting backscattered electrons generated from said specimen upon irradiation with said electron beam, and said signal computing means evaluates said three-dimensional shape by use of a secondary electron signal detected by said secondary electron detecting unit and a backscattered electron signal detected by said backscattered electron detecting unit.

4. An apparatus for measuring a three-dimensional shape, comprising:

an electron beam irradiation means for scanningly irradiating a specimen with a condensed electron beam;

a signal detecting means comprising a secondary electron detecting means for detecting secondary electrons generated from said specimen upon irradiation with said electron beam; and

a signal computing means for computing a signal from said signal detecting means;

wherein said signal computing means has the function of dividing a signal waveform obtained by said signal detecting means into a plurality of regions based on variation in the signal amount, and estimating the three-dimensional shape of said specimen according to the sizes of said divisional regions.

5. An apparatus for measuring a three-dimensional shape as set forth in claim 4, wherein said electron beam irradiation means irradiates the surface of said specimen with said electron beam from a plurality of directions by sequentially changing the angle of incidence, and said signal computing means evaluates said three-dimensional shape by use of a plurality of electron beam signals, said plurality of electron beam signals being associated with said plurality of incidence angles which are obtained by the detection by said signal detecting means of said secondary electrons generated from said surface of said specimen by irradiation with said electron beam while sequentially changing said incidence angle by said electron beam irradiation means.

6. An apparatus for measuring a three-dimensional shape as set forth in claim 4, said signal detecting means further comprises a backscattered electron detecting unit for detecting backscattered electrons generated from said specimen upon irradiation with said electron beam, and said signal computing means evaluates said three-dimensional shape by use of a secondary electron signal detected by said secondary electron detecting means and a backscattered electron signal detected by said backscattered electron detecting unit.

7-12. -12. (canceled)