Amorphous oxide and field effect transistor
First Claim
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1. An amorphous oxide comprising a microcrystal and having an electron carrier concentration of less than 1018/cm3.
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Abstract
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
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Citations
21 Claims
- 1. An amorphous oxide comprising a microcrystal and having an electron carrier concentration of less than 1018/cm3.
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5. An amorphous oxide, wherein electron mobility increases as electron carrier concentration increases.
- 6. A field effect transistor comprising an active layer of an amorphous oxide containing a microcrystal, and a gate electrode formed so as to face the active layer through a gate insulator.
- 8. An amorphous oxide whose composition changes in a layer thickness direction and having an electron carrier concentration of less than 1018/cm3.
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12. A field effect transistor comprising
an active layer of an amorphous oxide whose composition changes in a layer thickness direction, and a gate electrode formed so as to face the active layer through a gate insulator, wherein the active layer comprises a first region and a second region, which is closer to the gate insulator than the first region, and the oxygen concentration of the second region is higher than that of the first region.
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13. A field effect transistor comprising
an active layer of an amorphous oxide having at least one element selected from the group consisting of In and Zn, and a gate electrode formed so as to face the active layer through a gate insulator, wherein the active layer comprises a first region and a second region, which is closer to the gate insulator than the first region, and the In concentration of the second region is higher than that of the first region, or the Zn concentration of the second region is higher than that of the first region.
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14. An amorphous oxide whose composition changes in a layer thickness direction,
wherein electron mobility increases as electron carrier concentration increases.
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15. A field effect transistor comprising
an active layer of an amorphous oxide having at least one element selected from the group consisting of In and Zn, and a gate electrode formed so as to face the active layer through a gate insulator, wherein the active layer comprises a first region and a second region, which is closer to the gate insulator than the first region, and the In concentration of the second region is higher than that of the first region, or the Zn concentration of the second region is higher than that of the first region.
- 16. An amorphous oxide comprising one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn, and F and having an electron carrier concentration of less than 1018/cm3.
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20. An amorphous oxide comprising at least one element selected from group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn, and F, wherein electron mobility increases as electron carrier concentration increases.
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21. A field effect transistor comprising
an active layer formed of an amorphous oxide containing at least one element selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn, and F; - and
a gate electrode formed so as to face the active layer via a gate insulator.
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Specification