Hall sensor and method for the operation thereof
First Claim
1. A Hall sensor on a semiconductor substrate, the Hall sensor comprising:
- a Hall plate in the semiconductor substrate, the Hall plate comprising a first zone having a first conduction type;
a second zone in the semiconductor substrate, the second zone having a second conduction type;
a space-charge zone in the semiconductor substrate, the space-charge zone separating the first zone and the second zone;
first contacts for supplying a control current to the first zone; and
second contacts for supplying a compensation current to the second zone.
1 Assignment
0 Petitions
Accused Products
Abstract
The invention relates to a Hall sensor on a semiconductor substrate (1), in which a Hall plate (2) is formed from a zone (33, 32) of one conduction type; in which a zone (33, 32) adjoining the Hall plate (2), which zone (33, 32) is separated from said Hall plate (2) by a space-charge zone (41), of the other conduction type is provided; and in which the Hall plate comprises contacts (311, 312, 313, 314, 321, 322, 323, 324) for supplying a control current (IS), while the zone of the second conduction type comprises contacts (311, 312, 313, 314, 321, 322, 323, 324) for supplying a compensation current (IK). The Hall sensor is advantageous in that the offset is reduced.
23 Citations
20 Claims
-
1. A Hall sensor on a semiconductor substrate, the Hall sensor comprising:
-
a Hall plate in the semiconductor substrate, the Hall plate comprising a first zone having a first conduction type;
a second zone in the semiconductor substrate, the second zone having a second conduction type;
a space-charge zone in the semiconductor substrate, the space-charge zone separating the first zone and the second zone;
first contacts for supplying a control current to the first zone; and
second contacts for supplying a compensation current to the second zone. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. An apparatus comprising:
-
a first zone having a first doping, the first zone carrying a compensation current;
a second zone having a second doping, the second zone carrying a control current;
a third zone having the first doping;
a first separation zone that separates the first and second zones, the compensation current affecting a thickness of the first separation zone; and
a second separation zone that separates the second and third zones, the control current affecting a thickness of the second separation zone. - View Dependent Claims (9, 10, 11, 12, 13, 14)
-
-
15. An apparatus comprising:
-
a first zone having a first doping, the first zone carrying a control current;
a second zone having a second doping, the second zone carrying a compensation current; and
a separation zone that separates the first and second zones, the control current and the compensation current keeping a thickness of the first zone and a thickness of the separation zone substantially constant. - View Dependent Claims (16, 17, 18, 19, 20)
-
Specification