Transponder incorporated into an electronic device
First Claim
1. A device comprising:
- a first substrate having a metalization layer formed on the first substrate, a cap layer covering at least all of the metalization layer, at least a portion of the first substrate is not covered by the metalization layer;
an integrated circuit chip coupled to the first substrate, the integrated circuit chip being placed in proximity and in non-physical contact with the metalization layer; and
a conductive layer attached to the integrated circuit chip, the conductive layer having at least a portion placed in a non-physical contact with the metalization layer, wherein the integrated circuit chip is capacitively coupled to the metalization layer through the conductive layer and the metalization layer.
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Accused Products
Abstract
An electronic device. The device comprises a metalization layer and an integrated circuit chip incorporated into the device wherein the integrated circuit chip is capacitively coupled to the metalization layer. The device comprises a first substrate having the metalization layer formed on the substrate, a cap layer covering at least the entire metalization layer and at least a portion of the first substrate not covered by the metalization layer. The integrated circuit chip is coupled to the first substrate, and is placed in proximity and in non-physical contact with the metalization layer. A conductive layer is attached to the integrated circuit chip. The conductive layer has at least a portion placed in a non-physical contact with the metalization layer. The integrated circuit chip is capacitively coupled to the metalization layer through the conductive layer and the metalization layer.
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Citations
88 Claims
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1. A device comprising:
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a first substrate having a metalization layer formed on the first substrate, a cap layer covering at least all of the metalization layer, at least a portion of the first substrate is not covered by the metalization layer;
an integrated circuit chip coupled to the first substrate, the integrated circuit chip being placed in proximity and in non-physical contact with the metalization layer; and
a conductive layer attached to the integrated circuit chip, the conductive layer having at least a portion placed in a non-physical contact with the metalization layer, wherein the integrated circuit chip is capacitively coupled to the metalization layer through the conductive layer and the metalization layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 52)
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19. A device comprising:
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a first substrate having a metalization layer formed on the first substrate, a cap layer covering at least all of the metalization layer, at least a portion of the first substrate is not covered by the metalization layer;
a label placed over the first substrate;
an integrated circuit chip coupled to the label, the integrated circuit chip being placed in proximity and in non-physical contact with the metalization layer; and
a conductive layer attached to the integrated circuit chip, the conductive layer having at least a portion placed in a non-physical contact with the metalization layer, wherein the integrated circuit chip is capacitively coupled to the metalization layer through the conductive layer and the metalization layer. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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39. A device comprising:
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a first substrate having a metalization layer formed on the substrate, a cap layer covering at least all of the metalization layer, at least a central portion of the first substrate is not covered by the metalization layer; and
a center ring substrate placed over the central portion, the center ring substrate comprising an integrated circuit chip disposed therein, a conductive layer attached to the integrated circuit chip, and one or more weight balancing components, the integrated circuit chip is placed such that the integrated circuit chip is in proximity and in non-physical contact with the metalization layer, the conductive layer having at least a portion placed in a non-physical contact with the metalization layer, and wherein the integrated circuit chip is capacitively coupled to the metalization layer through the conductive layer and the metalization layer. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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53. A method comprising:
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obtaining an electronic device, the electronic device comprising a first substrate having a metalization layer formed on the substrate, a cap layer covering at least all of the metalization layer, at least a portion of the first substrate is not covered by the metalization layer;
providing an RFID transponder, the RFID transponder includes identification information for the electronic device; and
providing an RFID reader receptive of the RFID transponder;
wherein the RFID transponder is incorporated into the electronic device and wherein the RFID transponder is configured to utilize the metalization layer as an antenna for the RFID transponder. - View Dependent Claims (54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 74, 75)
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- 70. The method of claim 70 wherein the integrated circuit chip is deposited in the center ring substrate using a fluidic-self-assembly (FSA) process.
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76. An apparatus comprising:
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a machine readable storage medium disposed in a first substrate;
a radio frequency identification (RFID) integrated circuit (IC) coupled to the first substrate, the RFID IC identifying a content of the machine readable storage medium. - View Dependent Claims (77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88)
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Specification