Semiconductor device, and method for manufacturing the same

• US 20060110863A1
• Filed: 11/16/2005
• Published: 05/25/2006
• Est. Priority Date: 11/22/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamamoto, Yoshiaki, Isobe, Atsuo, Tanaka, Koichiro, Yamazaki, Shunpei, Ohgarane, Daisuke
• Granted Patent: US 7,736,964 B2
• Time in Patent Office: Days
• US Class Current: 438/149
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2223/5442 comprising non digital, non alphanumeric information, e.g. symbols
• CPC Class Codes: H01L 2223/54426 for alignment
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29199 Material of the matrix
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29299 Base material
• CPC Class Codes: H01L 2224/293 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48464 : the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/83191 : wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/838 : Bonding techniques
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 23/544 : Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 27/12 : the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 29/78603 : characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78648 : arranged on opposing sides of the channel
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01Q 1/38 : formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 23/00 : Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 9/285 : Planar dipole H01Q9/065 takes precedence; patch antenna H01Q9/0407
• CPC Class Codes: Y10S 438/982 : Varying orientation of devices in array

Abstract

It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming selectively a peeling layer over a first substrate;

forming a layer having a plurality of thin film transistors over the peeling layer;

forming a first opening so that a part of a semiconductor film of the thin film transistor is exposed and a forming second opening so that a the first substrate is exposed between the peeling layers;

forming a first conductive film at the first opening and the second opening;

processing the first conductive film to form a wiring at the first opening and to form a source or drain electrode at the second opening;

forming a third conductive film so that the peeling layer is exposed;

introducing an etching agent into the third opening and removing the peeling layer to separate the layer having the plurality of thin film transistors from the first substrate; and

pasting the layer having the plurality of thin film transistors onto the second substrate so that the wiring and the second conductive film provided over the second substrate are electrically connected to each other.

2. A method for manufacturing a semiconductor device comprising:

forming selectively a peeling layer over a first substrate;

forming a layer having a plurality of thin film transistors over the peeling layer;

forming a first opening so that a part of a semiconductor film of the thin film transistor is exposed and forming a plurality of second openings so that a the first substrate is exposed between the peeling layers;

forming a first conductive film at the first opening and at the second opening;

processing the first conductive film to form a wiring at the first opening and to form a source or drain electrode at the second opening portion;

forming a third conductive film so that the peeling layer is exposed;

introducing an etching agent into the third opening and removing the peeling layer to separate the layer having the plurality of thin film transistors from the first substrate; and

pasting the layer having the plurality of thin film transistors onto the second substrate so that the wiring and the second conductive film provided over the second substrate are electrically connected to each other.

3. A method for manufacturing a semiconductor device comprising:

forming selectively a peeling layer over a first substrate;

forming a layer having a plurality of thin film transistors over the peeling layer;

forming a first opening so that a part of a semiconductor film of the thin film transistor is exposed and forming a second opening so that a the first substrate is exposed between the thin film transistors;

forming a first conductive film at the first opening and at the second opening;

processing the first conductive film to form a wiring at the first opening and to form a source or drain electrode at the second opening;

forming a third conductive film so that the peeling layer is exposed;

introducing an etching agent into the third opening and removing the peeling layer to separate the layer having the plurality of thin film transistors from the first substrate; and

pasting the layer having the plurality of thin film transistors onto the second substrate so that the wiring and the second conductive film provided over the second substrate are electrically connected to each other.

4. A method for manufacturing a semiconductor device comprising:

forming selectively a peeling layer over a first substrate;

forming a layer having a plurality of thin film transistors over the peeling layer;

forming a first opening so that a part of a semiconductor film of the thin film transistor is exposed and forming a plurality of second openings so that a the first substrate is exposed between the thin film transistors;

forming a first conductive film at the first opening and at the second opening;

processing the first conductive film to form a wiring at the first opening and to form a source or drain electrode at the second opening;

forming a third conductive film so that the peeling layer is exposed;

introducing an etching agent into the third opening and removing the peeling layer to separate the layer having the plurality of thin film transistors from the first substrate; and

pasting the layer having the plurality of thin film transistors onto the second substrate so that the wiring and the second conductive film provided over the second substrate are electrically connected to each other.

5. A method for manufacturing a semiconductor device comprising:

forming selectively a peeling layer over a first substrate;

forming a base insulating film over the peeling layer;

removing the base insulating film at a periphery of the substrate;

forming a semiconductor film over the base insulating film;

removing the semiconductor film at a periphery of the substrate;

forming a marker at the semiconductor film without exposing the peeling layer;

emitting a laser to the semiconductor film by employing the marker;

processing the semiconductor film to form an island like semiconductor film;

forming a gate insulating film and a gate electrode sequentially over the island like semiconductor film;

adding an impurity to a part of the island like semiconductor film by using the gate electrode to form an impurity region;

forming a first opening so that the impurity region is exposed and forming a second opening so that the first substrate is exposed between the peeling layers;

forming a first conductive film at the first opening and at the second opening;

processing the first conductive film to form a wiring at the first opening and to form a source or drain electrode at the second opening;

forming a third opening so that the peeling layer is exposed;

introducing an etching agent into the third opening and removing the peeling layer to separate the layer having the plurality of thin film transistors from the first substrate; and

pasting the layer having the plurality of thin film transistors onto the second substrate so that the wiring and the second conductive film provided over the second substrate are electrically connected to each other.

11. The method for manufacturing a semiconductor device according to claim 5, wherein laser irradiation is performed with continuous-wave laser.

17. The method for manufacturing a semiconductor device according to claim 5, further comprising leaving the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

23. The method for manufacturing a semiconductor device according to claim 11, further comprising leaving the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

24. The method for manufacturing a semiconductor device according to claim 5, further comprising forming the marker at a film other than the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

30. The method for manufacturing a semiconductor device according to claim 11, further comprising forming the marker at a film other than the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

6. A method for manufacturing a semiconductor device comprising:

forming selectively a peeling layer over a first substrate;

forming a base insulating film over the peeling layer;

removing the base insulating film at a periphery of the substrate;

forming a semiconductor film over the base insulating film;

removing the semiconductor film at a periphery of the substrate;

forming a marker at the semiconductor film without exposing the peeling layer;

emitting laser to the semiconductor film by employing the marker;

processing the semiconductor film to form an island like semiconductor film;

forming a gate insulating film and a gate electrode sequentially over the island like semiconductor film;

adding an impurity to a part of the island like semiconductor film by using the gate electrode to form an impurity region;

forming a first opening so that the impurity region is exposed and forming a plurality of second openings so that the first substrate is exposed between the peeling layers;

forming a first conductive film in the first opening and in the second opening;

processing the first conductive film to form a wiring in the first opening and to form a source or drain electrode in the second opening;

forming a third opening so that the peeling layer is exposed;

introducing an etching agent into the third opening and removing the peeling layer to separate the layer having the plurality of thin film transistors from the first substrate; and

pasting the layer having the plurality of thin film transistors onto the second substrate so that the wiring and the second conductive film provided over the second substrate are electrically connected to each other.

12. The method for manufacturing a semiconductor device according to claim 6, wherein laser irradiation is performed with continuous-wave laser.

18. The method for manufacturing a semiconductor device according to claim 6, further comprising leaving the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

25. The method for manufacturing a semiconductor device according to claim 6, further comprising forming the marker at a film other than the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

7. A method for manufacturing a semiconductor device comprising:

forming selectively a peeling layer over a first substrate;

forming a base insulating film over the peeling layer;

removing the base insulating film at a periphery of the substrate;

forming a semiconductor film over the base insulating film;

removing the semiconductor film at a periphery of the substrate;

forming a marker at the semiconductor film without exposing the peeling layer;

emitting laser to the semiconductor film by employing the marker;

processing the semiconductor film to form an island like semiconductor film;

forming a gate insulating film and a gate electrode sequentially over the island like semiconductor film;

adding an impurity to a part of the island like semiconductor film by using the gate electrode to form an impurity region;

forming a first opening so that the impurity region is exposed and forming a second opening so that the first substrate is exposed between the semiconductor films;

forming a first conductive film in the first opening and in the second opening;

processing the first conductive film to form a wiring in the first opening and to form a source or drain electrode in the second opening;

forming a third opening so that the peeling layer is exposed;

introducing an etching agent into the third opening and removing the peeling layer to separate the layer having the plurality of thin film transistors from the first substrate; and

pasting the layer having the plurality of thin film transistors onto the second substrate so that the wiring and the second conductive film provided over the second substrate are electrically connected to each other.

13. The method for manufacturing a semiconductor device according to claim 7, wherein laser irradiation is performed with continuous-wave laser.

19. The method for manufacturing a semiconductor device according to claim 7, further comprising leaving the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

26. The method for manufacturing a semiconductor device according to claim 7, further comprising forming the marker at a film other than the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

8. A method for manufacturing a semiconductor device comprising:

forming selectively a peeling layer over a first substrate;

forming a base insulating film over the peeling layer;

removing the base insulating film at a periphery of the substrate;

forming a semiconductor film over the base insulating film;

removing the semiconductor film at a periphery of the substrate;

forming a marker at the semiconductor film without exposing the peeling layer;

emitting laser to the semiconductor film by employing the marker;

processing the semiconductor film to form an island like semiconductor film;

forming a gate insulating film and a gate electrode sequentially over the island like semiconductor film;

adding an impurity to a part of the island like semiconductor film by using the gate electrode to form an impurity region;

forming a first opening so that the impurity region is exposed and forming a plurality of second openings so that the first substrate is exposed between the semiconductor films;

forming a first conductive film in the first opening and in the second opening;

processing the first conductive film to form a wiring at the first opening and to form a source or drain electrode at the second opening;

forming a third opening so that the peeling layer is exposed;

introducing an etching agent into the third opening portion and removing the peeling layer to separate the layer having the plurality of thin film transistors from the first substrate; and

pasting the layer having the plurality of thin film transistors onto the second substrate so that the wiring and the second conductive film provided over the second substrate are electrically connected to each other.

14. The method for manufacturing a semiconductor device according to claim 8, wherein laser irradiation is performed with continuous-wave laser.

20. The method for manufacturing a semiconductor device according to claim 8, further comprising leaving the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

27. The method for manufacturing a semiconductor device according to claim 8, further comprising forming the marker at a film other than the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

33. The semiconductor device according to claim 14, wherein the substrate is a film substrate.

35. The semiconductor device according to claim 14, wherein the thin film transistor has a semiconductor film having a thickness of 40 to 170 nm.

9. A method for manufacturing a semiconductor device comprising:

forming selectively a peeling layer over a first substrate;

forming an absorption film so as to be in contact with the peeling layer;

forming a base insulating film over the absorption film;

removing the base insulating film at a periphery of the substrate;

forming a semiconductor film over the base insulating film;

removing the semiconductor film at a periphery of the substrate;

forming a marker at the semiconductor film without exposing the peeling layer bi virtue of the absorption film;

emitting laser to the semiconductor film by using the marker;

processing the semiconductor film to form an island like semiconductor film;

forming a gate insulating film and a gate electrode sequentially over the island like semiconductor film;

adding an impurity to a part of the island like semiconductor film by using the gate electrode to form an impurity region;

forming a first opening so that the impurity region is exposed and forming a second opening so that the first substrate is exposed between the semiconductor films;

forming a first conductive film at the first opening and at the second opening;

processing the first conductive film to form a wiring at the first opening and to form a source or drain electrode at the second opening;

forming a third opening so that the peeling layer is exposed;

introducing an etching agent into the third opening and removing the peeling layer to separate the layer having the plurality of thin film transistors from the first substrate; and

pasting the layer having the plurality of thin film transistors onto the second substrate so that the wiring and the second conductive film provided over the second substrate are electrically connected to each other.

15. The method for manufacturing a semiconductor device according to claim 9, wherein laser irradiation is performed with continuous-wave laser.

21. The method for manufacturing a semiconductor device according to claim 9, further comprising leaving the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

28. The method for manufacturing a semiconductor device according to claim 9, further comprising forming the marker at a film other than the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

34. The semiconductor device according to claim 15, wherein the substrate is a film substrate.

36. The semiconductor device according to claim 15, wherein the thin film transistor has a semiconductor film having a thickness of 40 to 170 nm.

10. A method for manufacturing a semiconductor device comprising:

forming selectively a peeling layer over a first substrate;

forming an absorption film so as to be in contact with the peeling layer;

forming a base insulating film over the absorption film;

removing the base insulating film at a periphery of the substrate;

forming a semiconductor film over the base insulating film;

removing the semiconductor film at a periphery of the substrate;

forming a marker at the semiconductor film without exposing the peeling layer bi virtue of the absorption film;

emitting laser to the semiconductor film by using the marker;

processing the semiconductor film to form an island like semiconductor film;

forming a gate insulating film and a gate electrode sequentially over the island like semiconductor film;

adding an impurity to a part of the island like semiconductor film by using the gate electrode to form an impurity region;

forming a first opening so that the impurity region is exposed and forming a plurality of second openings so that the first substrate is exposed between the semiconductor films;

forming a first conductive film at the first opening and at the second opening;

processing the first conductive film to form a wiring in the first opening and to form a source or drain electrode at the second opening;

forming a third opening so that the peeling layer is exposed;

introducing an etching agent into the third opening and removing the peeling layer to separate the layer having the plurality of thin film transistors from the first substrate; and

pasting the layer having the plurality of thin film transistors onto the second substrate so that the wiring and the second conductive film provided over the second substrate are electrically connected to each other.

16. The method for manufacturing a semiconductor device according to claim 10, wherein laser irradiation is performed with continuous-wave laser.

22. The method for manufacturing a semiconductor device according to claim 10, further comprising leaving the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

29. The method for manufacturing a semiconductor device according to claim 10, further comprising forming the marker at a film other than the semiconductor film over the peeling layer so that the marker is formed at the semiconductor film without exposing the peeling layer.

31. A semiconductor device comprising:

a layer having a plurality of thin film transistors;

a source or drain electrode connected to a semiconductor film of the thin film transistor, the source or drain electrode being formed in a first opening;

a wiring connected to the source or drain electrode, the wiring being formed in a second opening potion provided between the thin film transistors;

a substrate; and

a conductive film provided over the substrate;

wherein the wiring and the conductive film are electrically connected to each other by pasting the layer having the thin film transistors and the substrate to each other.

32. A semiconductor device comprising:

a layer having a plurality of thin film transistors;

a source or drain electrode connected to a semiconductor film of the thin film transistor, the source or drain electrode being formed in a first opening;

a wiring connected to the source or drain electrode, the wiring being formed in a plurality of second openings provided between the thin film transistors;

a substrate; and

a conductive film provided over the substrate;

wherein the wiring and the conductive film are electrically connected to each other by pasting the layer having the thin film transistors and the substrate to each other.