Method of forming a gate of a semiconductor device
First Claim
1. A method of forming a gate structure of a semiconductor device, comprising:
- forming a first preliminary gate structure on a substrate, the first preliminary gate structure including a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially formed on the substrate;
primarily oxidizing the first preliminary gate structure using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having a partially oxidized tungsten layer pattern, wherein the partially oxidized tungsten layer includes tungsten oxide; and
forming a gate structure by reducing the tungsten oxide in the partially oxidized tungsten layer into tungsten using a gas including hydrogen.
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Abstract
In a method for forming a gate in a semiconductor device, a first preliminary gate structure is formed on a substrate. The first preliminary gate structure includes a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially stacked on the substrate. A primary oxidation process is performed using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having tungsten oxide. The tungsten oxide is reduced to a tungsten material using a gas containing hydrogen to form a gate structure. The tungsten oxide may not be formed on the gate structure so that generation of the whiskers may be suppressed. Thus, a short between adjacent wirings may not be generated.
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Citations
22 Claims
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1. A method of forming a gate structure of a semiconductor device, comprising:
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forming a first preliminary gate structure on a substrate, the first preliminary gate structure including a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially formed on the substrate;
primarily oxidizing the first preliminary gate structure using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having a partially oxidized tungsten layer pattern, wherein the partially oxidized tungsten layer includes tungsten oxide; and
forming a gate structure by reducing the tungsten oxide in the partially oxidized tungsten layer into tungsten using a gas including hydrogen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 20)
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14. A method of forming a gate structure of a non-volatile memory device, comprising:
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forming a first preliminary gate structure on a substrate, the first preliminary gate structure including a tunnel oxide layer, a first polysilicon layer pattern, an ONO layer pattern, a second polysilicon layer pattern and a tungsten layer pattern sequentially stacked on the substrate;
primarily oxidizing the first preliminary gate structure using oxygen radicals at a first temperature for adjusting a thickness of the tunnel oxide layer to form a second preliminary gate structure having a partially oxidized tungsten layer pattern, wherein the partially oxidized tungsten layer includes tungsten oxide; and
forming a gate structure by reducing the tungsten oxide in the partially oxidized tungsten layer into tungsten using a gas including hydrogen. - View Dependent Claims (15, 16, 17, 18, 19, 21, 22)
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Specification