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Method of forming a gate of a semiconductor device

  • US 20060110900A1
  • Filed: 11/18/2005
  • Published: 05/25/2006
  • Est. Priority Date: 11/19/2004
  • Status: Active Grant
First Claim
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1. A method of forming a gate structure of a semiconductor device, comprising:

  • forming a first preliminary gate structure on a substrate, the first preliminary gate structure including a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially formed on the substrate;

    primarily oxidizing the first preliminary gate structure using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having a partially oxidized tungsten layer pattern, wherein the partially oxidized tungsten layer includes tungsten oxide; and

    forming a gate structure by reducing the tungsten oxide in the partially oxidized tungsten layer into tungsten using a gas including hydrogen.

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