×

Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte

  • US 20060110926A1
  • Filed: 10/31/2005
  • Published: 05/25/2006
  • Est. Priority Date: 11/02/2004
  • Status: Active Grant
First Claim
Patent Images

1. A method for fabricating a III-nitride semiconductor structure comprising strategically modifying a local electrochemical potential of the semiconductor structure relative to an electrolyte to achieve a highly selective photo-induced etch.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×