Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte
First Claim
1. A method for fabricating a III-nitride semiconductor structure comprising strategically modifying a local electrochemical potential of the semiconductor structure relative to an electrolyte to achieve a highly selective photo-induced etch.
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Abstract
A method for locally controlling an electrical potential of a semiconductor structure or device, and hence locally controlling lateral and/or vertical photoelectrochemical (PEC) etch rates, by appropriate placement of electrically resistive layers or layers that impede electron flow within the semiconductor structure, and/or by positioning a cathode in contact with specific layers of the semiconductor structure during PEC etching.
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Citations
8 Claims
- 1. A method for fabricating a III-nitride semiconductor structure comprising strategically modifying a local electrochemical potential of the semiconductor structure relative to an electrolyte to achieve a highly selective photo-induced etch.
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8. A method for locally controlling an electrical potential of a semiconductor structure or device, and hence locally controlling lateral and/or vertical photoelectrochemical (PEC) etch rates, by appropriate placement of electrically resistive layers or layers that impede electron flow within the semiconductor structure, and/or by positioning a cathode in contact with specific layers of the semiconductor structure during PEC etching.
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