Method and apparatus for forming insulating film

• US 20060110934A1
• Filed: 11/08/2005
• Published: 05/25/2006
• Est. Priority Date: 11/08/2004
• Status: Abandoned Application

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Fukuchi, Yusuke
• Application Number:
  US11/268,819
• Publication Number:
  US 20060110934A1
• Time in Patent Office: Days
• US Class Current: 438/778
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02236 group IV semiconductor
• CPC Class Codes: H01L 21/02238 silicon in uncombined form, i.e. pure silicon
• CPC Class Codes: H01L 21/02252 formation by plasma treatment, e.g. plasma oxidation of the substrate after treatment of an insulating film by plasma H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/31662 of silicon in uncombined form

Abstract

The present invention provides a method and apparatus for forming an insulating film having good reliability, in accordance with a process without high-temperature heating. In accordance with the present invention, in a process for forming an insulating film for a semiconductor device by oxidizing a material to be processed, exposed at the surface of a substrate to be processed, in accordance with plasma oxidation method, the plasma processing is carried out by use of at least a gas that contains hydrogen atoms other than H₂ and H₂O and a gas that contains oxygen atoms other than H₂O.

Claims

1. An insulating film forming method in which a material to be processed, which is exposed at a surface of a substrate to be processed, is oxidized in accordance with a plasma oxidation method and by use of at least a gas that contains hydrogen atoms other than H₂ and H₂O and a gas that contains oxygen atoms other than H₂O, to produce an insulating film for a semiconductor device.

2. A method according to claim 1, wherein the gas that contains hydrogen atoms other than H₂ and H₂O comprises one of NH₃, CH₄, HCl, HBr and HI, and wherein the gas that contains oxygen atoms other than H₂O comprises at least one of O₂, O₃, NO, N₂O, NO₂, CO and CO₂.

3. A method according to claim 1, wherein the plasma oxidation process is carried out while the substrate to be processed is placed on a support table, and wherein the support table is maintained at a temperature not greater than 600°

C.

4. A method according to claim 3, wherein the temperature of the support table is maintained in a range from 200°

C. to 400°

C.

5. A method according to claim 1, wherein the material exposed at the surface of the substrate to be processed comprises at least one of monocrystal silicon, polycrystal silicon, amorphous silicon, silicon carbide and silicon germanium.

6. A method according to claim 1, wherein the plasma oxidation process uses a plasma source which is based on surface wave plasma.

7. An insulating film forming apparatus in which a material to be processed, which is exposed at a surface of a substrate to be processed, is oxidized by use of plasma oxidizing means to produce an insulating film for a semiconductor device, characterized by means for performing plasma processing by use of at least a gas that contains hydrogen atoms other than H₂ and H₂O and a gas that contains oxygen atoms other than H₂O.