Semiconductor processing apparatus

• US 20060112876A1
• Filed: 06/17/2005
• Published: 06/01/2006
• Est. Priority Date: 11/26/2004
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Suk Chan, Choi, Jin Hyuk
• Application Number:
  US11/154,578
• Publication Number:
  US 20060112876A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: C23C 16/4558 Perforated rings
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A semiconductor processing apparatus, designed to inject reactant gas with uniform pressure and flux therein, includes a chamber in which a process is performed, a gas supply to supply reactant gas to the chamber, a gas dispenser having a plurality of nozzles to inject the reactant gas into the chamber, and a gas distribution route formed in the gas dispenser to uniformly distribute the reactant gas supplied from the gas supply to the nozzles.

Claims

1. A semiconductor processing apparatus, comprising:

a chamber in which a process is performed;

a gas supply to supply reactant gas to the chamber;

a gas dispenser having a plurality of nozzles to inject the reactant gas into the chamber; and

a gas distribution route formed in the gas dispenser to uniformly distribute the reactant gas supplied by the gas supply to the nozzles.

2. The semiconductor processing apparatus according to claim 1, wherein the gas distribution route comprises two or more channels to uniformly distribute the reactant gas supplied by the gas supply, and a plurality of ports connecting the channels to each other.

3. The semiconductor processing apparatus according to claim 2, wherein the number of ports connecting the channels increases as the channels progress toward the plurality of nozzles from the gas supply.

4. A semiconductor processing apparatus, comprising:

at least one gas supply to supply reactant gas into a chamber;

a ring-shaped gas dispenser constituting a portion of a side surface of the chamber;

a plurality of gas nozzles arranged in a radial direction on an inner surface of the gas dispenser; and

at least one gas distribution route formed in the gas dispenser to uniformly distribute the reactant gas supplied from the gas supply to the nozzles.

5. The semiconductor processing apparatus according to claim 4, wherein the gas distribution route comprises a plurality of circular channels and a plurality of ports connecting the channels.

6. The semiconductor processing apparatus according to claim 5, wherein the number of ports connecting the channels increases as the channels progress toward the plurality of gas nozzles from the gas supply.

7. The semiconductor processing apparatus according to claim 5, wherein ports connecting one of the plurality of channels to adjacent channels on the upper and lower side of the channel are not aligned.

8. The semiconductor processing apparatus according to claim 4, wherein the at least one gas supply comprises two or more gas supplies, and the at least one gas distribution route comprises two or more gas distribution routes corresponding to the gas supplies, respectively.

9. A semiconductor processing apparatus, comprising:

a chamber including upper and lower portions;

a gas dispenser disposed between the upper and lower portions of the chamber and including plural nozzles to inject reactant gas into the chamber; and

at least one gas distribution route including plural consecutive channels to uniformly distribute a reactant gas to the gas dispenser.

10. The semiconductor processing apparatus according to claim 9, wherein the at least one gas distribution route is provided within the gas dispenser and comprises:

a first channel extending through the gas dispenser;

a second channel positioned above the first channel and extending through the gas dispenser; and

a plurality of first ports communicating reactant gas between the first and second channels.

11. The semiconductor processing apparatus according to claim 10, wherein the at least one gas distribution route further comprises:

a third channel positioned above the second channel and extending through the gas dispenser; and

a plurality of second ports communicating reactant gas between the second and third channels, the plurality of second ports being alternately positioned with respect to the plurality of first ports.

12. The semiconductor processing apparatus according to claim 9, further comprising:

a reactant gas supply to supply reactant gas to the at least one gas distribution route.

13. The semiconductor processing apparatus according to claim 11, wherein the at least one gas distribution route comprises first and second gas distribution routes.

14. The semiconductor processing apparatus according to claim 10, wherein the second channel communicates the reactant gas from the first channel to the gas dispenser.

15. The semiconductor processing apparatus according to claim 11, wherein the thir channel communicates the reactant gas from the second channel to the gas dispenser and the second channel receives the reactant gas from the first channel.

16. A semiconductor processing apparatus, comprising:

a reaction chamber;

a gas supply to supply gas;

a plurality of nozzles to deposit the gas into the reaction chamber;

a plurality of gas distribution channels to uniformly distribute the gas supplied by the gas supply around a circumference of the reaction chamber; and

a nozzle communication channel communicating with the plurality of gas distribution channels and the nozzles to transfer the distributed gas to the plurality of nozzles.

17. The semiconductor processing apparatus according to claim 16, further comprising:

a plurality of ports connecting the plurality of gas distribution channels, and connecting one of the gas distribution channels to the nozzle communication channel.

18. The semiconductor processing apparatus according to claim 16, wherein the plurality of gas distribution channels are vertically spaced apart and the nozzle communication channel is disposed above an uppermost one of the plurality of gas distribution channels.

19. A semiconductor processing apparatus, comprising:

a cylindrical reaction chamber;

a plurality of gas supplies to supply a plurality of reactant gases; and

a plurality of gas distribution units to uniformly distribute the reactant gases supplied by the gas supplies, each gas distribution unit comprising;

a gas inlet to communicate with the respective gas supply to introduce the respective reactant gas supplied by the respective gas supply;

a plurality of ring-shaped channels disposed around a circumference of the cylindrical reaction chamber to uniformly distribute the respective reactant gas around the circumference of the cylindrical reaction chamber; and

a plurality of nozzles disposed around the circumference of the cylindrical reaction chamber and communicating with one of the plurality of ring-shaped channels to deposit the uniformly distributed respective reactant gas into the cylindrical reaction chamber such that the respective reactant gas is distributed uniformly through each of the nozzles.

20. The semiconductor processing apparatus according to claim 19, wherein each gas distribution unit further comprises:

a plurality of ports connecting the plurality of ring-shaped channels to communicate the respective reactant gas between the plurality of ring-shaped channels; and

a plurality of ring-shaped plates, each ring-shaped plate disposed between two of the ring-shaped channels and comprising a plurality of holes to accommodate the plurality of ports.

21. The semiconductor processing apparatus according to claim 19, wherein each gas distribution unit comprises:

a plurality of paths corresponding to the plurality of nozzles, each path connecting the respective nozzle to the one of the plurality of ring-shaped channels to communicate the respective reactant gas between the ring-shaped channel and the nozzle.