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Test structure of semiconductor device

  • US 20060113534A1
  • Filed: 10/05/2005
  • Published: 06/01/2006
  • Est. Priority Date: 11/30/2004
  • Status: Active Grant
First Claim
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1. A test structure of a semiconductor device comprising:

  • first and second active regions which are electrically isolated from each other and on which silicided first and second junction regions are formed, respectively;

    a semiconductor substrate or a well which is formed on lower parts of the first and second junction regions and has a conductivity type different from the first and second junction regions; and

    first and second pads electrically connected respectively to the first and second junction regions for receiving an application of an electrical signal and outputting a detected signal, wherein the first and second pads are formed on the same level as a lower part of a metal layer or on the same level as the semiconductor substrate.

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