Test structure of semiconductor device
First Claim
1. A test structure of a semiconductor device comprising:
- first and second active regions which are electrically isolated from each other and on which silicided first and second junction regions are formed, respectively;
a semiconductor substrate or a well which is formed on lower parts of the first and second junction regions and has a conductivity type different from the first and second junction regions; and
first and second pads electrically connected respectively to the first and second junction regions for receiving an application of an electrical signal and outputting a detected signal, wherein the first and second pads are formed on the same level as a lower part of a metal layer or on the same level as the semiconductor substrate.
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Abstract
A test structure of a semiconductor device with improved test reliability is provided. The test structure includes first and second active regions which are electrically isolated from each other and on which silicided first and second junction regions are formed, respectively, a semiconductor substrate or a well which is formed on lower parts of the first and second junction regions and has a conductivity type different from the first and second junction regions, and first and second pads through which an electrical signal is applied to the first and second junction regions and detected, and which are formed on the same level as a lower part of a metal layer or on the same level as the semiconductor substrate.
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Citations
24 Claims
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1. A test structure of a semiconductor device comprising:
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first and second active regions which are electrically isolated from each other and on which silicided first and second junction regions are formed, respectively;
a semiconductor substrate or a well which is formed on lower parts of the first and second junction regions and has a conductivity type different from the first and second junction regions; and
first and second pads electrically connected respectively to the first and second junction regions for receiving an application of an electrical signal and outputting a detected signal, wherein the first and second pads are formed on the same level as a lower part of a metal layer or on the same level as the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A test structure of a semiconductor device comprising:
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first and second active regions which are electrically isolated from each other and on which silicided first and second junction regions are formed, respectively;
a semiconductor substrate or a well which is formed on lower parts of the first and second junction regions and has a conductivity type different from the first and second junction regions;
first and second pads which are formed on the semiconductor substrate and the same level as a lower part of a metal layer; and
first and second connecting portions which connect the first and second pads to the first and second junction regions, respectively. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A test structure of a semiconductor device comprising:
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first and second active regions which are electrically isolated from each other and in which silicided first and second junction regions are formed, respectively;
a semiconductor substrate or a well which electrically connects lower parts of the first and second junction regions to each other and has a conductivity type different from the first and second junction regions; and
first and second well pads which are formed on a portion of the lower parts of the first and second junction regions and have the same conductivity type as the first and second junction regions. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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Specification