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• US 20060113536A1
• Filed: 11/09/2005
• Published: 06/01/2006
• Est. Priority Date: 11/10/2004
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.), Japan Science And Technology Agency, Tokyo Institute of Technology (National University Corporation Tokyo Institute of Technology)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.), Tokyo Institute of Technology (National University Corporation Tokyo Institute of Technology)
• Inventors: Kamiya, Toshio, Nomura, Kenji, Kumomi, Hideya, Hosono, Hideo
• Granted Patent: US 7,791,072 B2
• Time in Patent Office: Days
• US Class Current: 257/57
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.

Claims

1. An active matrix display comprising:

a light control device; and

a field effect transistor for driving the light control device,

wherein an active layer of the field effect transistor comprises an amorphous oxide having an electron carrier concentration of less than 10¹⁸/cm³.

2. An active matrix display according to claim 1, wherein the amorphous oxide comprises an oxide containing at least one of Zn, In, and Sn.

3. An active matrix display according to claim 1, wherein the amorphous oxide is selected from the group consisting of an oxide containing In, Zn and Sn, an oxide containing In and Zn, an oxide containing In and Sn, and an oxide containing In.

4. An active matrix display according to claim 1, wherein the amorphous oxide comprises an oxide containing In, Ga, and Zn.

5. An active matrix display according to claim 1, wherein the light control device contains one of a liquid crystal and an electrophoretic particle.

6. An active matrix display according to claim 1, wherein the light control device contains a liquid crystal, and has an orientation film and an insulation film arranged in this order from a side of the liquid crystal between the active layer and the liquid crystal.

7. An active matrix display according to claim 1, wherein the light control device contains a liquid crystal, and has an orientation film and an insulation film arranged in this order from a side of the liquid crystal between a gate electrode of the field effect transistor and the liquid crystal.

8. An active matrix display according to claim 5, wherein the insulation film comprises one of a silicon oxide film and a silicon nitride film.

9. An active matrix display according to claim 1, wherein the light control device is arranged on a flexible resin substrate.

10. An active matrix display according to claim 1, wherein the light control device is arranged on a light transmissive substrate.

11. An active matrix display comprising:

a light control device; and

a field effect transistor for driving the light control device,

wherein an electron mobility of an active layer of the field effect transistor tends to increase with increasing electron carrier concentration.

12. An active matrix display comprising:

a light control device; and

a field effect transistor for driving the light control device,

wherein an active layer of the field effect transistor has an amorphous oxide semiconductor capable of realizing normally-off of the field effect transistor.

13. An active matrix display according to claim 12, wherein the amorphous oxide semiconductor has an electron carrier concentration of less than 10¹⁸/cm³ sufficient to realize the normally-off.

14. An active matrix display according to claim 12, wherein the amorphous oxide semiconductor is selected from the group consisting of an oxide containing In, Zn and Sn, an oxide containing In and Zn, an oxide containing In and Sn, and an oxide containing In.

15. An active matrix display comprising:

a first electrode;

a second electrode;

a liquid crystal interposed between the first and second electrodes; and

a field effect transistor for driving the liquid crystal,

wherein an active layer of the transistor comprises an amorphous oxide, and

wherein the transistor is a normally-off transistor.

16. An active matrix display according to claim 15, wherein the amorphous oxide is selected from the group consisting of an oxide containing In, Zn and Sn, an oxide containing In and Zn, an oxide containing In and Sn, and an oxide containing In.

17. An active matrix display according to claim 16, further comprising an orientation film and an insulation film arranged in this order from a side of the liquid crystal between a gate electrode of the field effect transistor and the liquid crystal.