LIGHT EMITTING DIODE

• US 20060113548A1
• Filed: 11/29/2004
• Published: 06/01/2006
• Est. Priority Date: 11/29/2004
• Status: Abandoned Application

• Current Assignee: Chunghwa Picture Tubes Limited (Tatung Co., Ltd.)
• Original Assignee: Chunghwa Picture Tubes Limited (Tatung Co., Ltd.)
• Inventors: Liu, Mei, Lin, Wei-Chih, Yang, Ching-An, Chen, Ching-Chung, Wu, Shin-Min
• Application Number:
  US10/904,770
• Publication Number:
  US 20060113548A1
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

A light emitting diode is provided, wherein a first semiconductor layer is disposed on a substrate, and a second semiconductor layer is disposed on the first semiconductor layer. The first and the second semiconductor layers are doped with different type dopants. In addition, a second electrode is disposed on the second semiconductor layer, and a first electrode is disposed on the first semiconductor layer to surround the second electrode. A dielectric layer is disposed on the substrate to isolates the first electrode from the second electrode. A redistributing circuit is disposed on the dielectric layer. The redistributing circuit is electrically connected to the first electrode and the second electrode to provide a first extending electrode and a second extending electrode. The light emitting diode can prevent the crowding effect and provide better reliability and light emitting efficiency.

Claims

1. A light emitting diode, comprising:

a substrate;

a first semiconductor layer disposed on the substrate;

a second semiconductor layer disposed on the first semiconductor to expose a peripheral region of the first semiconductor layer, wherein the first and the second semiconductor layers are respectively doped with dopants of different types;

a second electrode disposed on the second semiconductor layer; and

a first electrode arranged on the peripheral region of the first semiconductor layer that is exposed by the second semiconductor layer, and surrounding the second electrode.

2. The light emitting diode of claim 1, further comprising a dielectric layer disposed on the substrate to cover the first and the second semiconductor layers, wherein the dielectric layer exposes the first and the second electrodes, and electrically isolates the first electrode from the second electrode.

3. The light emitting diode of claim 2, further comprising a redistributing circuit disposed on the dielectric layer, wherein the redistributing circuit comprises a first extension electrode and a second extension electrode, and wherein the first extension electrode is coupled to the first electrode and the second extension electrode is coupled to the second electrode.

4. The light emitting diode of claim 3, wherein the first extension electrode and the second extension electrode are respectively located at opposite sides of the substrate.

5. The light emitting diode of claim 1, wherein the first electrode surrounds the second electrode along an outer rim of the second electrode.

6. The light emitting diode of claim 5, wherein a shape of the second electrode is rectangle or circle.

7. The light emitting diode of claim 1, wherein the first semiconductor layer is doped with a P-type dopant, and the second semiconductor layer is doped with a N-type dopant.

8. The light emitting diode of claim 1, wherein the first semiconductor layer is doped with a N-type dopant, and the second semiconductor layer is doped with a P-type dopant.

9. A light emitting diode, comprising:

a substrate;

a first semiconductor layer disposed on the substrate;

a plurality of second semiconductor layers disposed on the first semiconductor to expose a portion region of the first semiconductor layer, wherein the first semiconductor layer and the second semiconductor layers are respectively doped with dopants of different types;

a plurality of second electrodes each disposed on one of the second semiconductor layers;

a plurality of first electrodes arranged on the peripheral region of the first semiconductor layer that is exposed by the second semiconductor layer, and surrounding at least one of the second electrodes;

a dielectric layer disposed on the substrate to cover the first semiconductor layer and the second semiconductor layers, wherein the dielectric layer exposes the first electrodes and the second electrodes, and electrically isolates the first electrodes from the second electrode; and

a redistributing circuit disposed on the dielectric layer, wherein the redistributing circuit is coupled to the first electrodes and the second electrodes, and the redistributing circuit comprises a first extension electrode and a second extension electrode.

10. The light emitting diode of claim 9, wherein the first extension electrode and the second extension electrode are respectively located at opposite sides of the substrate.

11. The light emitting diode of claim 9, wherein the first electrodes surrounds the second electrodes along outer rims of the corresponding second electrodes.

12. The light emitting diode of claim 11, wherein a shape of the second electrodes is rectangle or circle.

13. The light emitting diode of claim 9, wherein the first electrodes are adjacent to each other.

14. The light emitting diode of claim 9, wherein the first semiconductor layer is doped with a P-type dopant, and the second semiconductor layer is doped with a N-type dopant.

15. The light emitting diode of claim 9, wherein the first semiconductor layer is doped with a N-type dopant, and the second semiconductor layer is doped with a P-type dopant.

16. The light emitting diode of claim 9, wherein each of the second semiconductor layers has a second electrode disposed thereon.

17. The light emitting diode of claim 9, wherein each of the second semiconductor layers has a plurality of second electrodes disposed thereon.