Light emitting diode and fabrication method thereof

• US 20060113550A1
• Filed: 01/18/2006
• Published: 06/01/2006
• Est. Priority Date: 07/18/2003
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Kim, Seong Jae
• Granted Patent: US 7,531,827 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 Å.

Claims

1-13. -13. (canceled)

14. An LED comprising:

a buffer layer disposed above a substrate;

at least one N-type GaN layer disposed above the buffer layer;

a GaN layer having indium disposed above the N-type GaN layer;

an active layer disposed above the GaN layer having indium; and

at least one P-type GaN layer disposed above the active layer.

15. The LED according to claim 14, wherein the active layer has a three dimensional structure.

16. The LED according to claim 14, further comprising an undoped GaN layer disposed between the buffer layer and the N-type GaN layer.

17. The LED according to claim 14, wherein the GaN layer having indium has a low mole of indium.

18. The LED according to claim 14, wherein an empirical formula of the GaN layer having indium is given by

In(x)Ga(1-x)N and a range of x is given by 0<

x<

2.

19. The LED according to claim 14, wherein a thickness of the GaN layer having indium is 50-200 Å

.

20. The LED according to claim 14, wherein a GaN layer whose thickness is 10-30 Å

, is formed above the GaN layer having indium.

21. The LED according to claim 14, wherein the active layer is of a multi-quantum well structure having an InGaN/GaN structure.

22. A method for fabricating an LED (light emitting diode), comprising the steps of:

forming a buffer layer above a substrate;

forming a GaN layer above the buffer layer;

forming an N-type GaN layer above the GaN layer;

forming a GaN layer having indium above the N-type GaN layer;

forming an active layer above the GaN layer having indium; and

forming a P-type GaN layer above the active layer.

23. The method according to claim 22, wherein the GaN having indium is formed at a temperature of 600-800°

C.

24. The method according to claim 22, wherein after the GaN layer containing indium is formed, a GaN layer is formed at a thickness of 10-30 Å

.

25. The method according to claim 22, wherein the active layer is formed in 1 period to 7 periods under a temperature condition of 600-800°

C.

26. The method according to claim 22, wherein after the active layer is formed, the P-type GaN layer is formed at a thickness of 750-1500 Å

under a temperature condition of 980-1020°

C.