Semiconductor device and manufacturing method thereof

• US 20060113597A1
• Filed: 12/19/2005
• Published: 06/01/2006
• Est. Priority Date: 11/19/1999
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Suzawa, Hideomi, Ono, Koji, Arao, Tatsuya
• Granted Patent: US 7,560,734 B2
• Time in Patent Office: Days
• US Class Current: 257/347
• CPC Class Codes: G02F 1/13624 having more than one switching element per pixel
• CPC Class Codes: H01L 2029/7863 with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.

Claims

1. A semiconductor device comprising:

a semiconductor layer over a substrate, the semiconductor layer comprising;

a channel forming region;

a first impurity region forming a source region or a drain region containing a single conductivity type impurity element; and

a second impurity region forming an LDD region contacting the channel forming region,

an insulating film in contact with the semiconductor layer;

a gate electrode having a tapered portion in contact with the insulating film;

wherein a portion of the second impurity region is overlapped with the gate electrode,

wherein a thickness of a portion of the insulating film overlapped with the gate electrode is thicker than a thickness of the other portion of the insulating film.

7. A semiconductor device according to claim 1, wherein an angle of the papered portion is greater than or equal to 30°

and less than or equal to 60°

.

13. A semiconductor device according to claim 1, wherein the semiconductor device is a device selected from the group consisting of a cellular phone, a video camera, a mobile computer, a head mount display, a rear-type projector, a portable electronic book, a personal computer, a DVD, a digital camera and a front-type projector.

2. A semiconductor device comprising:

a semiconductor layer over a substrate, the semiconductor layer comprising;

a channel forming region;

a first impurity region forming a source region or a drain region containing a single conductivity type impurity element; and

a second impurity region forming an LDD region contacting the channel forming region,

an insulating film in contact with the semiconductor layer;

a gate electrode having a tapered portion in contact with the insulating film;

a wiring comprising a first layer, a second layer over the first layer and a third layer over the second layer, and in contact with the semiconductor layer;

a pixel electrode on the third layer;

wherein a portion of the second impurity region is overlapped with the gate electrode, and

wherein a thickness of a portion of the insulating film overlapped with the gate electrode is thicker than a thickness of the other portion of the insulating film.

8. A semiconductor device according to claim 2, wherein an angle of the papered portion is greater than or equal to 30°

and less than or equal to 60°

.

14. A semiconductor device according to claim 2, wherein the semiconductor device is a device selected from the group consisting of a cellular phone, a video camera, a mobile computer, a head mount display, a rear-type projector, a portable electronic book, a personal computer, a DVD, a digital camera and a front-type projector.

19. A semiconductor device according to claim 2, wherein the first layer comprises a titanium film, the second layer comprises an aluminum film and the third layer comprises a titanium nitride film

22. A semiconductor device according to claim 2, wherein the pixel electrode comprises an indium oxide/zinc oxide alloy.

3. A semiconductor device comprising:

a semiconductor layer over a substrate, the semiconductor layer comprising;

a channel forming region;

a first impurity region forming a source region or a drain region containing a single conductivity type impurity element; and

a second impurity region forming an LDD region contacting the channel forming region,

first and second gate electrodes, each having a tapered portion, in contact with the insulating film,

wherein a thickness of a portion of the insulating film overlapped with the first or second gate electrode is thicker than a thickness of the other portion of the insulating film.

9. A semiconductor device according to claim 3, wherein an angle of the papered portion is greater than or equal to 30°

and less than or equal to 60°

.

15. A semiconductor device according to claim 3, wherein the semiconductor device is a device selected from the group consisting of a cellular phone, a video camera, a mobile computer, a head mount display, a rear-type projector, a portable electronic book, a personal computer, a DVD, a digital camera and a front-type projector.

4. A semiconductor device comprising:

a semiconductor layer over a substrate, the semiconductor layer comprising;

a channel forming region;

a first impurity region forming a source region or a drain region containing a single conductivity type impurity element; and

a second impurity region forming an LDD region contacting the channel forming region,

first and second gate electrodes, each having a tapered portion, in contact with the insulating film;

wherein the second impurity region is provided between the first and second gate electrodes, and

wherein a thickness of a portion of the insulating film overlapped with the first or second gate electrode is thicker than a thickness of the other portion of the insulating film.

10. A semiconductor device according to claim 4, wherein an angle of the papered portion is greater than or equal to 30°

and less than or equal to 60°

.

16. A semiconductor device according to claim 4, wherein the semiconductor device is a device selected from the group consisting of a cellular phone, a video camera, a mobile computer, a head mount display, a rear-type projector, a portable electronic book, a personal computer, a DVD, a digital camera and a front-type projector.

5. A semiconductor device comprising:

a semiconductor layer over a substrate, the semiconductor layer comprising;

a channel forming region;

a first impurity region forming a source region or a drain region containing a single conductivity type impurity element; and

a second impurity region forming an LDD region contacting the channel forming region,

first and second gate electrodes, each having a tapered portion, in contact with the insulating film,

a wiring comprising a first layer, a second layer over the first layer and a third layer over the second layer, and in contact with the semiconductor layer; and

a pixel electrode on the third layer,

wherein a thickness of a portion of the insulating film overlapped with the first or second gate electrode is thicker than a thickness of the other portion of the insulating film.

11. A semiconductor device according to claim 5, wherein an angle of the papered portion is greater than or equal to 30°

and less than or equal to 60°

.

17. A semiconductor device according to claim 5, wherein the semiconductor device is a device selected from the group consisting of a cellular phone, a video camera, a mobile computer, a head mount display, a rear-type projector, a portable electronic book, a personal computer, a DVD, a digital camera and a front-type projector.

20. A semiconductor device according to claim 5, wherein the first layer comprises a titanium film, the second layer comprises an aluminum film and the third layer comprises a titanium nitride film

23. A semiconductor device according to claim 5, wherein the pixel electrode comprises an indium oxide/zinc oxide alloy.

6. A semiconductor device comprising:

a semiconductor layer over a substrate, the semiconductor layer comprising;

a channel forming region;

a first impurity region forming a source region or a drain region containing a single conductivity type impurity element; and

a second impurity region forming an LDD region contacting the channel forming region,

first and second gate electrodes, each having a tapered portion, in contact with the insulating film;

a wiring comprising a first layer, a second layer over the first layer and a third layer over the second layer, and in contact with the semiconductor layer; and

a pixel electrode on the third layer,

wherein the second impurity region is provided between the first and second gate electrodes, and

wherein a thickness of a portion of the insulating film overlapped with the first or second gate electrode is thicker than a thickness of the other portion of the insulating film.

12. A semiconductor device according to claim 6, wherein an angle of the papered portion is greater than or equal to 30°

and less than or equal to 60°

.

18. A semiconductor device according to claim 6, wherein the semiconductor device is a device selected from the group consisting of a cellular phone, a video camera, a mobile computer, a head mount display, a rear-type projector, a portable electronic book, a personal computer, a DVD, a digital camera and a front-type projector.

21. A semiconductor device according to claim 6, wherein the first layer comprises a titanium film, the second layer comprises an aluminum film and the third layer comprises a titanium nitride film

24. A semiconductor device according to claim 6, wherein the pixel electrode comprises an indium oxide/zinc oxide alloy.