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Barrier material and process for Cu interconnect

  • US 20060113675A1
  • Filed: 12/01/2004
  • Published: 06/01/2006
  • Est. Priority Date: 12/01/2004
  • Status: Abandoned Application
First Claim
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1. A semiconductor device having enhanced electromigration performance, the device comprising:

  • a low-k dielectric layer, the low-k dielectric layer having a surface with a recessed feature;

    a diffusion barrier layer on the surface of the low-k dielectric layer;

    a glue layer on the diffusion barrier layer; and

    a conductor on the glue layer, the conductor filling the recessed feature.

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