SPUTTERED TRANSPARENT CONDUCTIVE FILMS
First Claim
Patent Images
1. A method for sputtering a doped coating onto a substrate, the method comprising:
- a) providing a sputter reactor comprising;
a cathode channel that allows a gas stream to flow therein and having a flow exit end, the cathode channel being defined by a channel defining surface, wherein the channel defining surface includes at least one target material; and
a dopant target positioned to provide dopant atoms to the gas stream when the gas stream is flowed through the cathode channel;
b) flowing a gas through the channel, such that the gas emerges from the flow exit;
c) generating a plasma, wherein material is sputtered off the channel-defining surface and the dopant target to form a gaseous mixture containing target atoms and dopant atoms that are transported to the substrate.
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Abstract
A hollow cathode sputtering apparatus and related method for introducing dopants into a sputtered coating is provided. The method utilizes a sputter reactor which includes a cathode channel that allows a gas stream to flow therein and a flow exit end from which gases may flow out of and towards a substrate to be coated. The cathode channel as used in the invention is defined by a channel defining surface that includes at least one target material. The sputter reactor further includes a dopant target positioned to provide dopant atoms to the gas stream when the gas stream is flowed through the cathode channel.
32 Citations
35 Claims
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1. A method for sputtering a doped coating onto a substrate, the method comprising:
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a) providing a sputter reactor comprising;
a cathode channel that allows a gas stream to flow therein and having a flow exit end, the cathode channel being defined by a channel defining surface, wherein the channel defining surface includes at least one target material; and
a dopant target positioned to provide dopant atoms to the gas stream when the gas stream is flowed through the cathode channel;
b) flowing a gas through the channel, such that the gas emerges from the flow exit;
c) generating a plasma, wherein material is sputtered off the channel-defining surface and the dopant target to form a gaseous mixture containing target atoms and dopant atoms that are transported to the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for sputtering a doped coating onto a substrate, the method comprising:
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a) providing a sputter reactor comprising;
a vacuum chamber;
an anode;
a cathode having a channel-defining surface that defines a cathode channel and a flow exit end, wherein the channel-defining surface includes at least one target material and the cathode channel is adapted to allow a gas stream to flow therein, and a dopant target positioned to provide dopant atoms to the gas stream when the gas stream is flowed through the cathode channel;
a first plasma generating power source in communication with the anode and cathode, a second plasma generating power source in communication with the dopant target, wherein the anode, the cathode, and the dopant target are positioned within the vacuum chamber;
b) flowing gas through the channel;
c) generating a plasma, wherein material is sputtered off the channel-defining surface and the dopant target to form a gaseous mixture containing target atoms and dopant atoms that are transported to the substrate. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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24. A sputter-coating system comprising:
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a vacuum chamber;
an anode;
a cathode having a channel-defining surface that defines a cathode channel and a flow exit end, wherein the channel-defining surface includes at least one target material and the cathode channel is adapted to allow a gas stream to flow therein;
a dopant target positioned to provides dopant atoms to the gas stream when the gas stream is flowed through the cathode channel, wherein the anode, the cathode, and the dopant target are positioned within the vacuum chamber;
a first plasma generating power source in communication with the anode and cathode; and
a second plasma generating power source in communication with the dopant target, wherein the dopant target, the anode and cathode are adapted to generate a plasma whereby material is sputtered off the at least one target material and the dopant target to form a gaseous mixture containing target atoms and dopant atoms that are transported to the substrate. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification