Organo-resistive memory unit

• US 20060118780A1
• Filed: 12/09/2003
• Published: 06/08/2006
• Est. Priority Date: 01/09/2003
• Status: Abandoned Application

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Gerlt, Axel, Clemens, Wolfgan
• Application Number:
  US10/541,815
• Publication Number:
  US 20060118780A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/0009 RRAM elements whose operation depends upon chemical change
• CPC Class Codes: G11C 13/0014 comprising cells based on organic memory material
• CPC Class Codes: G11C 13/0016 comprising polymers

Abstract

The invention provides, for the first time, the possibility of producing an organic memory unit within a known production process for organic electronic components, because the memory unit is composed of substantially the same organo-resistive materials as are the organic electronic components themselves. Moreover, the invention discloses a circuit component by means of which any desired memory unit, that is to say, a volatile or non-volatile, write-once or rewritable memory unit can be equally well produced in a known production process.

Claims

1. A memory unit composed substantially of organic material, wherein the storage function of the component is achieved due to an organo-resistive material being embedded in an electrolyte.

2. A memory unit as defined in claim 1, wherein said organo-resistive material is separated from a conductive material by an electrolyte so that the flow of ionic current through the electrolyte due to application of a voltage to the conductive material causes a readable change in the conductance and/or color of the organo-resistive material.

3. A memory unit as defined in claim 1 or claim 2, wherein the organo-resistive material is disposed in structured form on a substrate.

4. A memory unit as defined in any one of the previous claims, wherein said organo-resistive materials are based on conjugated chains.

5. A memory unit as defined in any one of the previous claims, wherein the electrolyte is water-based and/or solid.

6. A memory unit as defined in any one of the previous claims, wherein the organo-resistive material and/or a mixture of said materials is/are soluble and can be processed in solution.

7. Electronics circuitry for a memory unit, wherein the circuit arrangement is provided between a ground and a supply voltage and comprises at least one resistor, an organo-resistive conductive element, embedded in an electrolyte, and a control electrode.

8. Electronics circuitry as defined in claim 7, wherein the design of the memory unit provides a matrix arrangement for achieving a higher storage density.