Semiconductor light emitting diode having high efficiency and method of manufacturing the same
First Claim
1. A semiconductor light emitting diode having a textured structure, comprising:
- a substrate;
a textured structure layer of an anodized metal oxide located on the substrate;
a first semiconductor layer located on the textured structure;
an active layer located on the first semiconductor layer; and
a second semiconductor layer located on the active layer on a side opposite to the semiconductor layer.
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Accused Products
Abstract
Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.
39 Citations
16 Claims
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1. A semiconductor light emitting diode having a textured structure, comprising:
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a substrate;
a textured structure layer of an anodized metal oxide located on the substrate;
a first semiconductor layer located on the textured structure;
an active layer located on the first semiconductor layer; and
a second semiconductor layer located on the active layer on a side opposite to the semiconductor layer. - View Dependent Claims (2, 3)
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4. A method of manufacturing a semiconductor light emitting diode, comprising:
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sequentially forming a material layer and a metal layer on a substrate;
forming a metal oxide layer having holes by anodizing the metal layer;
forming holes in the material layer corresponding to the holes of the metal oxide layer;
removing the metal oxide layer; and
sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on an upper part of the material layer with holes formed therein on the substrate after the metal oxide layer is removed. - View Dependent Claims (5, 6, 7, 8, 9)
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10. A method of manufacturing a semiconductor light emitting diode having a textured structure, the method comprising:
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forming a metal layer on a substrate;
forming a metal oxide layer having holes by anodizing the metal layer;
forming holes in the substrate corresponding to the holes of the metal oxide layer; and
sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on an upper part of the substrate after the metal oxide layer is removed. - View Dependent Claims (11, 12)
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13. A method of manufacturing a semiconductor light emitting diode having a textured structure, the method comprising:
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forming a metal layer on a substrate;
forming a metal oxide layer having holes by anodizing the metal layer; and
sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the metal oxide layer. - View Dependent Claims (14, 15, 16)
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Specification