Crystal growth method of nitride semiconductor

• US 20060118810A1
• Filed: 01/05/2006
• Published: 06/08/2006
• Est. Priority Date: 01/29/2003
• Status: Abandoned Application

• Current Assignee: Johngeon Shin
• Original Assignee: Johngeon Shin
• Inventors: Shin, Johngeon
• Application Number:
  US11/325,453
• Publication Number:
  US 20060118810A1
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 33/007 comprising nitride compounds

Abstract

The present invention relates to a method of manufacturing a nitride semiconductor, and, more particularly, a crystal growth method of a nitride semiconductor wherein a nitride semiconductor are grown on a nitride buffer layer including aluminums so that it is possible to improve electrical and crystalline characteristics. The invention may be formed on a sapphire substrate.

Claims

1. A method of manufacturing a nitride semiconductor comprising:

a first step of forming, on a metal oxide layer, a first nitride buffer layer including said metal;

a second step of forming a bivalent nitride buffer layers on said first nitride buffer layers; and

a third step of forming a nitride semiconductor on said second nitride buffer layer.

2. The method of manufacturing a nitride semiconductor of claim 1,

wherein said metal oxide layer is a sapphire substrate and said metal is aluminum.

3. The method of manufacturing a nitride semiconductor of claim 1,

wherein in said first step, said first nitride buffer layer including said metal is formed on said metal oxide layer by a crystal growth method;

in said second step, said bivalent nitride buffer layers is formed on said first nitride buffer layers by the crystal growth method; and

in said third step, said nitride semiconductor is formed on said second nitride buffer layer by the crystal growth method.

4. The method of manufacturing a nitride semiconductor of claim 1,

wherein said first nitride buffer layer including metal and said second nitride buffer layer include indium.

5. The method of manufacturing a nitride semiconductor of claim 1,

wherein said second nitride buffer layer is bivalent nitride layer.

6. The method of manufacturing nitride semiconductor of claim 1, comprising, an additional step of forming a third nitride buffer layer which does not include said metal, on said first nitride buffer layer, after said first step.

7. The method of manufacturing nitride semiconductor of claim 1, wherein said first nitride buffer layer is an AIxGayInzN (0<

x≦

1, 0≦

y≦

1, 0≦

z≦

1) layer.

8. The method of manufacturing nitride semiconductor of claim 1,

wherein said third nitride buffer layer is the GaxInyN and (0≦

x≦

1, 0≦

y≦

1).

9. The method of manufacturing nitride semiconductor of claim 1, wherein said second nitride buffer layer is a layer of one selected from the group consisting of AIN, GaN, InN, and SiNx.

10. The method of manufacturing nitride semiconductor of claim 9,

wherein said nitride semiconductor layer is a GaN layer.

11. The method of manufacturing nitride semiconductor of claim 1,

comprising an additional step of forming a nitride film, after the second step.

12. The method of manufacturing nitride semiconductor of claim 11, wherein said nitride film is formed on a sapphire substrate by treating the sapphire substrate at a high temperature and letting ammonia (NH₃) flow thereon.

13. The method of manufacturing nitride semiconductor of claim 6, wherein said first nitride buffer layer, said second nitride buffer layer and said third nitride buffer layer are grown at 400˜

600°

C. to have a thickness of 10˜

1000 Å

.