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High-frequency switching transistor and high-frequency circuit

  • US 20060118884A1
  • Filed: 11/04/2005
  • Published: 06/08/2006
  • Est. Priority Date: 11/05/2004
  • Status: Active Grant
First Claim
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1. A switching transistor, comprising:

  • a substrate having a substrate dopant concentration;

    a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration, which is higher than the substrate dopant concentration;

    a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration, which is higher than the barrier region dopant concentration;

    a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration, which is higher than the barrier region dopant concentration;

    a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region; and

    an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode.

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