High-frequency switching transistor and high-frequency circuit
First Claim
1. A switching transistor, comprising:
- a substrate having a substrate dopant concentration;
a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration, which is higher than the substrate dopant concentration;
a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration, which is higher than the barrier region dopant concentration;
a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration, which is higher than the barrier region dopant concentration;
a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region; and
an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode.
1 Assignment
0 Petitions
Accused Products
Abstract
A high-frequency switching transistor comprises a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, which has a first conductivity type, wherein a barrier region dopant concentration is higher than the substrate dopant concentration. Further, the high-frequency switching transistor comprises a source region embedded in the barrier region, which comprises a second conductivity type different to the first conductivity type, and has a source region dopant concentration, which is higher than the barrier region dopant concentration. Additionally, the high-frequency switching transistor comprises a drain region embedded in the barrier region and disposed offset from the source region, which comprises the second conductivity type and has a drain region dopant concentration, which is higher than the barrier region dopant concentration. Further, the high-frequency switching transistor has a channel region, extending between the source region, wherein the channel region comprises a subregion of the barrier region. Further, the high-frequency switching transistor has an insulation region, which covers the channel region and which is disposed between the channel region and the gate electrode. Such a high-frequency switching transistor allows switching of high-frequency signals with higher high-frequency signal amplitudes as are switchable by conventional high-frequency switching transistors.
-
Citations
32 Claims
-
1. A switching transistor, comprising:
-
a substrate having a substrate dopant concentration;
a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration, which is higher than the substrate dopant concentration;
a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration, which is higher than the barrier region dopant concentration;
a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration, which is higher than the barrier region dopant concentration;
a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region; and
an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A circuit, comprising:
-
a switch with a high-frequency switching transistor, comprising, a substrate having a substrate dopant concentration, a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration, which is higher than the substrate dopant concentration, a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration, which is higher than the barrier region dopant concentration, a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration, which is higher than the barrier region dopant concentration, a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region, and an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode; and
a control circuit configured to open and close the switch depending on a control signal, and operably coupled to provide the gate electrode with a potential for opening the switch, the control circuit further operable to enable a current flow between the source region and the drain region. - View Dependent Claims (15, 16, 20, 21, 23, 24, 25)
-
-
17. A circuit with a high-frequency switching transistor, comprising:
-
a substrate having a substrate dopant concentration;
a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration, which is higher than the substrate dopant concentration;
a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration, which is higher than the barrier region dopant concentration;
a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration, which is higher than the barrier region dopant concentration;
a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region; and
an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode, wherein the circuit is formed to provide the substrate of the high-frequency transistor with an offset voltage in relation to the source region and the drain region. - View Dependent Claims (18, 19, 22, 26, 27, 28, 29)
-
-
30. A circuit with a first terminal, a second terminal, a third terminal and a fourth terminal, comprising:
-
a first switch, which is formed to switch a first signal from the first terminal to the second terminal or from the first terminal to the fourth terminal; and
a second switch, which is formed to switch a second signal from the third terminal to the second terminal or from the third terminal to the fourth terminal, wherein the first switch comprises a first switching element with a first high-frequency switching transistor, which is connected between the first terminal and the second terminal, and a second switching element with a second high-frequency switching transistor, which is connected between the first terminal and the fourth terminal, and wherein the second switch comprises a third switching element with a third high-frequency transistor, which is connected between the third terminal and the second terminal and comprises a fourth switching element with a fourth high-frequency switching transistor, which is connected between the third terminal and the fourth terminal, wherein the first, second, third and fourth high-frequency switching transistor are controllable such that the fourth high-frequency switching transistor is opened when the first high-frequency switching transistor is opened, the fourth high-frequency switching transistor is closed when the first high-frequency switching transistor is closed, the third high-frequency switching transistor is opened when the second high-frequency switching transistor is opened, and the third high-frequency switching transistor is closed when the high-frequency switching transistor is closed;
wherein the first, second, third and fourth high-frequency switching transistor comprise;
a substrate having a substrate dopant concentration;
a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration, which is higher than the substrate dopant concentration;
a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration, which is higher than the barrier region dopant concentration;
a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration, which is higher than the barrier region dopant concentration;
a channel region disposed between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region; and
an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode. - View Dependent Claims (31, 32)
-
Specification