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Laminated semiconductor substrate process for producing the same

  • US 20060118935A1
  • Filed: 04/02/2004
  • Published: 06/08/2006
  • Est. Priority Date: 04/02/2003
  • Status: Active Grant
First Claim
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1. A bonded substrate fabricated to have its final active layer thickness of 200 nm or lower by performing an etching process on a surface of an active layer formed over a support substrate by cleaving off a portion of an active layer wafer, for the purpose of controlling the thickness of said active layer, said etching process carried out by using a solution having an etching effect so as to achieve the etching by a range of 1 nm to 1 μ

  • m.

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