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Method for forming halo/pocket implants through an L-shaped sidewall spacer

  • US 20060121681A1
  • Filed: 12/02/2004
  • Published: 06/08/2006
  • Est. Priority Date: 12/02/2004
  • Status: Abandoned Application
First Claim
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1. A method for manufacturing a semiconductor device, comprising:

  • forming L-shaped spacers proximate sidewalls of a gate structure located over a substrate; and

    implanting halo/pocket regions through the L-shaped spacer and in the substrate.

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