Method for forming halo/pocket implants through an L-shaped sidewall spacer
First Claim
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1. A method for manufacturing a semiconductor device, comprising:
- forming L-shaped spacers proximate sidewalls of a gate structure located over a substrate; and
implanting halo/pocket regions through the L-shaped spacer and in the substrate.
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Abstract
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the same. The method for manufacturing the semiconductor device, among other steps, includes forming an L-shaped spacer (410) proximate a sidewall of a gate structure (130) located over a substrate (110), and implanting halo/pocket implant regions (620) through the L-shaped spacer (410) and in the substrate (110).
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24 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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forming L-shaped spacers proximate sidewalls of a gate structure located over a substrate; and
implanting halo/pocket regions through the L-shaped spacer and in the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for manufacturing an integrated circuit, comprising:
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forming semiconductor devices over a substrate, including;
forming L-shaped spacers proximate sidewalls of a gate structure located over a substrate; and
implanting halo/pocket regions through the L-shaped spacers and in the substrate; and
forming interconnects within interlevel dielectric layers located over the substrate, the interconnects contacting the semiconductor devices and thereby forming an operational integrated circuit. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification