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Contact resistance reduction by new barrier stack process

  • US 20060121724A1
  • Filed: 12/02/2004
  • Published: 06/08/2006
  • Est. Priority Date: 12/02/2004
  • Status: Active Grant
First Claim
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1. A method for forming an interconnect, comprising:

  • forming an opening in a dielectric layer, depositing a liner over an inner surface of the opening, the depositing forming a reentrant profile near a top portion of the opening; and

    etching a portion of the liner, including removing at least a portion of the liner to reduce the reentrant profile and removing at least a portion of the liner at the bottom of the opening to expose an underlying layer located under the dielectric layer.

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