Selective formation of metal layers in an integrated circuit
First Claim
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1. A method for selectively forming a conductive layer in an integrated circuit, comprising:
- providing a first surface comprising copper and a second surface; and
contacting the first surface and the second surface with a vapor phase compound of a noble metal, thereby selectively forming a conductive layer comprising the noble metal on the first surface relative to the second surface.
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Abstract
A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The method comprises contacting the exposed copper surface with a vapor phase compound of a noble metal and selectively forming a layer of the noble metal on the exposed copper surface, either by a copper replacement reaction or selective deposition (e.g., ALD or CVD) of the noble metal.
170 Citations
47 Claims
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1. A method for selectively forming a conductive layer in an integrated circuit, comprising:
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providing a first surface comprising copper and a second surface; and
contacting the first surface and the second surface with a vapor phase compound of a noble metal, thereby selectively forming a conductive layer comprising the noble metal on the first surface relative to the second surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A method for selectively forming a conductive layer in an integrated circuit, comprising:
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providing a first surface and a second surface, the first surface being defined by a metal feature of the integrated circuit, the metal feature comprising copper;
contacting the first surface and the second surface with a vapor phase compound of a noble metal; and
performing a replacement reaction, wherein the copper of the metal feature is replaced with the noble metal dissociated from the vapor phase compound of the noble metal, thereby selectively depositing a conductive layer comprising the noble metal on the first surface relative to the second surface. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46)
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47-68. -68. (canceled)
Specification