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Selective formation of metal layers in an integrated circuit

  • US 20060121733A1
  • Filed: 10/18/2005
  • Published: 06/08/2006
  • Est. Priority Date: 10/26/2004
  • Status: Active Grant
First Claim
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1. A method for selectively forming a conductive layer in an integrated circuit, comprising:

  • providing a first surface comprising copper and a second surface; and

    contacting the first surface and the second surface with a vapor phase compound of a noble metal, thereby selectively forming a conductive layer comprising the noble metal on the first surface relative to the second surface.

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