Dynamically adaptable semiconductor parametric testing

• US 20060122803A1
• Filed: 01/30/2006
• Published: 06/08/2006
• Est. Priority Date: 04/25/2002
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Blunn, Robert G., Velichko, Sergey A., Dorough, Michael J.
• Granted Patent: US 7,165,004 B2
• Time in Patent Office: Days
• US Class Current: 702/118
• CPC Class Codes: G01R 31/2831 Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates G01R31/318511 takes precedence; testing during manufacture H01L22/00

Abstract

An apparatus, method, system, and signal-bearing medium may provide multiple maps, which may include multiple probing sequences to be called upon at run-time based on statistical thresholds or other selected criteria. Each map may include a series of locations on a wafer, the tests to perform at each location, and the measured results of each test. A parametric test system may perform the test at the associated location on the wafer. If the statistical threshold is exceeded or the selected criteria is met, the current map may be abandoned in favor of a different map.

Claims

1. A method of parametric testing of semiconductor wafers, comprising:

loading a wafer on a chuck;

aligning the wafer on the chuck;

calibrating a probe head to a location on the wafer;

reading a test plan for parametric testing of the wafer, the test plan including a first prober-movement map and a second prober-movement map;

probing the wafer based on the first prober-movement map of the test plan, interrupting the probing of the wafer in response to an error threshold being exceeded;

selecting the second prober-movement map; and

probing the wafer based on the second prober-movement map.

2. The method of claim 1, further including determining the error threshold based upon user input.

3. The method of claim 1, further including determining the error threshold based upon historical test data from other wafers.

4. The method of claim 3, wherein determining the error threshold comprises determining a badsite threshold based on a total number of bad sites for the first prober-movement map and a total number of sites on the first prober-movement map.

5. The method of claim 3, wherein determining the error threshold comprises determining a badwafer threshold based on a total number of bad wafers in a lot run and a total number of wafers in the lot run.

6. An apparatus for parametric testing of semiconductor wafers, comprising:

a prober including test pins and a wafer chuck;

a wafer loader to load a wafer on the wafer chuck;

an auto-alignment system to align the wafer on the wafer chuck; and

a test station adapted to;

read a test plan for parametric testing of the wafer, the test plan including a first prober-movement map and a second prober-movement map;

command to prober to probe the wafer based on the first prober-movement map;

command to prober to interrupt the probing of the wafer in response to an error threshold being exceeded;

select the second prober-movement map; and

command to prober to probe the wafer based on the second prober-movement map.

7. The apparatus of claim 6, wherein the test station is adapted to command the prober to interrupt the probing prior to the completion of the probing that is based on the first prober-movement map.

8. The apparatus of claim 7, wherein the test station is adapted to command the prober to remove electrical stimuli from the wafer prior to the interruption of the probing.

9. A method of parametric testing of semiconductor wafers, comprising:

loading a wafer on a chuck;

aligning the wafer on the chuck;

calibrating a probe head to a location on the wafer;

reading a test plan for parametric testing of the wafer, the test plan including a plurality of prober-movement maps;

probing the wafer based on one of the plurality of prober-movement maps, interrupting the probing of the wafer in response to an error threshold being exceeded;

selecting a different prober-movement map from the plurality of prober-movement maps; and

probing the wafer based on the selected different prober-movement map.

10. The method of claim 9, further comprising determining the error threshold based upon user input.

11. The method of claim 9, further comprising determining the error threshold based upon historical test data from other wafers.

12. The method of claim 11, wherein determining the error threshold comprises determining a badsite threshold based on a total number of bad sites for the first prober-movement map and a total number of sites on the first prober-movement map.

13. The method of claim 11, wherein determining the error threshold comprises determining a badwafer threshold based on a total number of bad wafers in a lot run and a total number of wafers in the lot run.

14. The method of claim 9, wherein reading the test plan comprises reading a test plan including a prober-movement map offering a serpentine-like prober-movement pattern.

15. The method of claim 9, wherein reading the test plan comprises reading a test plan including a prober-movement map offering a row-by-row prober-movement pattern.

16. The method of claim 9, wherein reading the test plan comprises reading a test plan including a prober-movement map offering a user-defined prober-movement pattern.

17. The method of claim 16, further comprising tailoring the user-defined prober-movement pattern to identify specific process-related problems.

18. The method of claim 17, further comprising tailoring the user-defined prober-movement pattern to identify wafer variations due to etching or depositions.

19. The method of claim 17, further comprising tailoring the user-defined prober-movement pattern to identify photo lithography induced striping.