n-Type thiophene semiconductors

• US 20060124909A1
• Filed: 01/31/2006
• Published: 06/15/2006
• Est. Priority Date: 07/24/2000
• Status: Active Grant

• Current Assignee: Antonio Facchetti, Tobin J. Marks
• Original Assignee: Antonio Facchetti, Tobin J. Marks
• Inventors: Marks, Tobin J., Facchetti, Antonio
• Granted Patent: US 7,374,702 B2
• Time in Patent Office: Days
• US Class Current: 252/500
• CPC Class Codes: C08G 61/126 with a five-membered ring containing one sulfur atom in the ring
• CPC Class Codes: H01B 1/127 comprising five-membered aromatic rings in the main chain, e.g. polypyrroles, polythiophenes
• CPC Class Codes: H01B 1/128 comprising six-membered aromatic rings in the main chain, e.g. polyanilines, polyphenylenes
• CPC Class Codes: H10K 10/46 Field-effect transistors, e.g. organic thin-film transistors [OTFT] H10K10/43 takes precedence
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
• CPC Class Codes: H10K 71/16 using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
• CPC Class Codes: H10K 71/164 using vacuum deposition
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/655 comprising only sulfur as heteroatom

Abstract

The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm²/Vs—some of the highest reported to date for n-type organic semiconductors.

Claims

1-10. -10. (canceled)

11. An n-type polythiophene composition having the structural formula

12. The n-type polythiophene composition of claim 11 wherein said fluoroalkyl moiety is selected from the group consisting of linear fluoroalkyl substituents, branched fluoroalkyl substituents and cyclic fluoroalkyl substituents.

13. The n-type polythiophene composition of claim 12 wherein said fluoroalkyl moiety has the structural formula C_nF_2n+1, where n is 1-about 8.

14. The n-type polythiophene composition of claim 11 wherein x is 1-about 4;

y is 1-about 8; and

z is 1-about 12.

15. The n-type polythiophene composition of claim 14 wherein said fluoroalkyl moiety has the structural formula C_nF_2n+1, where n is 1-about 8.

16-22. -22. (canceled)