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Thin gallium nitride light emitting diode device

  • US 20060124941A1
  • Filed: 12/12/2005
  • Published: 06/15/2006
  • Est. Priority Date: 12/13/2004
  • Status: Abandoned Application
First Claim
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1. A light emitting diode (LED) device that comprises a crystal structure of a sapphire substrate-free gallium nitride (GaN) LED, wherein the crystal structure is mounted on a first surface of a sub-mount substrate in the form of a unit LED chip, and the first surface of the sub-mount substrate has a surface area greater than the surface area of a region in which the unit chip is bonded.

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