Phosphor converted light emitting device

• US 20060124947A1
• Filed: 12/10/2004
• Published: 06/15/2006
• Est. Priority Date: 12/10/2004
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Lumileds Lighting US LLC (Apollo Global Management, Inc.)
• Inventors: Schmidt, Peter J., Mueller-Mach, Regina B., Meyer, Joerg, Mueller, Gerd O., Wiechert, Detlef Uwe
• Granted Patent: US 7,671,529 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: C09K 11/0883 Arsenides; Nitrides; Phosphides
• CPC Class Codes: C09K 11/77347 Silicon Nitrides or Silicon Oxynitrides
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials

Abstract

A semiconductor light emitting device is combined with a wavelength converting material. The semiconductor light emitting device is configured to emit first light of a first peak wavelength. The wavelength converting material is configured to absorb at least a portion of the first light and emit second light of a second peak wavelength. In some embodiments, the first wavelength converting material is (Ba_1-xSr)_2-y-0.5zSi₅N_8-zO_z:Eu_y²⁺ where 0.2<x<0.3, (Ba_1-xCa_x)_2-y-0.5zSi₅N_8-zO_z:Eu_y²⁺ where 0.01<x<0.2, or M₂Si_5-aA_aN_8-aO_a:Eu²⁺ where M=Sr, Ba, Ca; A=Al, B, Ga, Sc; and 0.01<a<0.2.

Claims

1. A structure comprising:

a semiconductor light emitting device configured to emit first light of a first peak wavelength; and

a first wavelength converting material comprising (Ba_1-xSr_x)_2-y-0.5zSi₅N_8-zO_z;

Eu_y²⁺ where 0.2<

x<

0.3, the first wavelength converting material being configured to absorb at least a portion of the first light and emit second light of a second peak wavelength.

2. The structure of claim 1 further comprising a second wavelength converting material configured to absorb at least a portion of the first or second light and emit third light of a third peak wavelength.

3. The structure of claim 2 wherein the second wavelength converting material comprises one of (Lu_1-x-y-a-bY_xGd_y)₃(Al_1-zGa_z)₅O₁₂:

Ce_a³⁺Pr_b³⁺ wherein 0<

x<

1, 0<

y<

1, 0<

z≦

0.1, 0<

a≦

0.2 and 0<

b≦

0.1, Lu₃Al₅O₁₂;

Ce³⁺, Y₃Al₅O₁₂;

Ce³⁺, (Sr_1-a-bCa_bBa_c)Si_xN_yO_z;

Eu_a²⁺ (a=0.002−

0.2, b=0.0−

0.25, c=0.0−

0.25, x=1.5−

2.5, y=1.5−

2.5, z=1.5−

2.5), SrSi₂N₂O₂;

Eu²⁺, (Sr_1-u-v-xMg_uCa_vBa_x)(Ga_2-y-zAl_yIn_zS₄);

Eu²⁺, SrGa₂S₄;

Eu²⁺, and (Sr_1-xBa_x)₂SiO₄;

Eu²⁺.

4. The structure of claim 2 wherein the structure emits composite light comprising first light, second light, and third light, that appears white.

5. The structure of claim 2 further comprising a third wavelength converting material configured to absorb at least a portion of the first, second, or third light and emit fourth light of a fourth peak wavelength.

6. The structure of claim 5 wherein the third wavelength converting material comprises one of MgSrSiO₄:

Eu²⁺;

(Sr_1-x-yCa_xBa_y)₃MgSi₂O₈;

Eu²⁺;

Ba₃MgSi₂O₈;

Eu²⁺; and

BaMgAl₁₀O₁₇;

Eu²⁺.

7. The structure of claim 5 wherein the structure emits composite light comprising first light, second light, third light, and fourth light, that appears white.

8. The structure of claim 1 wherein a concentration of Eu²⁺ in the first wavelength converting material is between 0.2% and 4%.

9. A structure comprising:

a semiconductor light emitting device configured to emit first light of a first peak wavelength; and

a first wavelength converting material comprising (Ba_1-xCa_x)_2-y-0.5zSi₅N_8-zO_z;

Eu_y²⁺ where 0.01<

x<

0.2, the first wavelength converting material being configured to absorb at least a portion of the first light and emit second light of a second peak wavelength.

10. The structure of claim 9 further comprising a second wavelength converting material configured to absorb at least a portion of the first or second light and emit third light of a third peak wavelength.

11. The structure of claim 10 wherein the second wavelength converting material comprises one of (Lu_1-x-y-a-bY_xGd_y)₃(Al_1-zGa_z)₅O₁₂:

Ce_a³⁺Pr_b³⁺ wherein 0<

x<

1, 0<

y<

1, 0<

z≦

0.1, 0<

a≦

0.2 and 0<

b≦

0.1, Lu₃Al₅O₁₂;

Ce³⁺, Y₃Al₅O₁₂;

Ce³⁺ (Sr_1-a-bCa_bBa_c)Si_xN_yO_z;

Eu_a²⁺ (a=0.002−

0.2, b=0.0−

0.25, c=0.0−

0.25, x=1.5−

2.5, y=1.5−

2.5, z=1.5−

2.5), SrSi₂N₂O₂;

Eu²⁺, (Sr_1-u-v-xMg_uCa_vBa_x)(Ga_2-y-zAl_yIn_zS₄);

Eu²⁺, SrGa₂S₄;

Eu²⁺, and (Sr_1-xBa_x)₂SiO₄;

Eu²⁺.

12. The structure of claim 10 wherein the structure emits composite light comprising first light, second light, and third light, that appears white.

13. The structure of claim 10 further comprising a third wavelength converting material configured to absorb at least a portion of the first, second, or third light and emit fourth light of a fourth peak wavelength.

14. The structure of claim 13 wherein the third wavelength converting material comprises one of MgSrSiO₄:

Eu²⁺;

(Sr_1-x-yCa_xBa_y)₃MgSi₂O₈;

Eu²⁺;

Ba₃MgSi₂O₈;

Eu²⁺; and

BaMgAl₁₀O₁₇;

Eu²⁺.

15. The structure of claim 13 wherein the structure emits composite light comprising first light, second light, third light, and fourth light, that appears white.

16. The structure of claim 9 wherein a concentration of Eu²⁺ in the first wavelength converting material is between 0.2% and 4%.

17. A structure comprising:

a semiconductor light emitting device configured to emit first light of a first peak wavelength; and

a first wavelength converting material comprising M₂Si_5-aA_aN_8-aO_a;

Eu²⁺ where M=Sr, Ba, Ca;

A=Al, B, Ga, Sc; and

0.01<

a<

0.2, the first wavelength converting material being configured to absorb at least a portion of the first light and emit second light of a second peak wavelength.

18. The structure of claim 17 further comprising a second wavelength converting material configured to absorb at least a portion of the first or second light and emit third light of a third peak wavelength.

19. The structure of claim 18 wherein the second wavelength converting material comprises one of (Lu_1-x-y-a-bY_xGd_y)₃(Al_1-zGa_z)₅O₁₂:

Ce_a³⁺Pr_b³⁺ wherein 0<

x<

1, 0<

y<

1, 0<

z≦

0.1, 0<

a≦

0.2 and 0<

b≦

0.1, Lu₃Al₅O₁₂;

Ce³⁺, Y₃Al₅O₁₂;

Ce³⁺, (Sr_1-a-bCa_bBa_c)Si_xN_yO_z;

Eu_a²⁺ (a=0.002−

0.2, b=0.0−

0.25, c=0.0−

0.25, x=1.5−

2.5, y=1.5−

2.5, z=1.5−

2.5), SrSi₂N₂O₂;

Eu²⁺, (Sr_1-u-v-xMg_uCa_vBa_x)(Ga_2-y-zAl_yIn_zS₄);

Eu²⁺, SrGa₂S₄;

Eu²⁺, and (Sr_1-xBa_x)₂SiO₄;

Eu²⁺.

20. The structure of claim 18 wherein the structure emits composite light comprising first light, second light, and third light, that appears white.

21. The structure of claim 18 further comprising a third wavelength converting material configured to absorb at least a portion of the first, second, or third light and emit fourth light of a fourth peak wavelength.

22. The structure of claim 21 wherein the third wavelength converting material comprises one of MgSrSiO₄:

Eu²⁺;

(Sr_1-x-yCa_xBa_y)₃MgSi₂O₈;

Eu²⁺;

Ba₃MgSi₂O₈;

Eu²⁺; and

BaMgAl₁₀O₁₇;

Eu²⁺.

23. The structure of claim 21 wherein the structure emits composite light comprising first light, second light, third light, and fourth light, that appears white.

24. The structure of claim 17 wherein A=Al.

25. The structure of claim 17 wherein A=B.