Methods of forming transistor constructions
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Abstract
The invention includes a non-volatile memory cell comprising a field effect transistor construction having a body region within a crystalline material. The body region includes a charge trapping region. The memory cell can be TFT-SOI based, and can be supported by a substrate selected from a diverse assortment of materials. The top portion of the substrate can be a conductive layer separated from the memory device by the SOI-oxide insulator film. The charge trapping region can be, for example, silicon enriched silicon nitride or silicon enriched silicon oxide. The crystalline material can include silicon and germanium. The transistor comprises first and second diffusion regions within the body region, and also comprises a channel region between the first and second diffusion regions. The entirety of the body region within the crystalline material can be within a single crystal of the material.
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Citations
104 Claims
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1-94. -94. (canceled)
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95. A method of forming a field effect transistor construction, comprising:
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providing a crystalline material which includes silicon and germanium;
forming a body region within the crystalline material, the body region including a charge trapping region which contains silicon-rich-nitride;
an entirety of the body region within the crystalline material being within a single crystal of the crystalline material;
forming a first diffusion region and a second diffusion region within the body region;
forming a channel region within the body region between the first and second diffusion regions; and
forming a gate over the channel region. - View Dependent Claims (96, 97, 98)
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99. A method of forming a field effect transistor construction, comprising:
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providing a crystalline material which includes silicon and germanium;
forming a body region within the crystalline material, the body region including a charge trapping region;
the charge trapping region comprising silicon oxynitride, transition metal oxide, metal silicide, silicon-rich-nitride or silicon-rich-oxide;
forming first and second diffusion regions within the body region;
forming a channel region within the body region between the first and second diffusion regions; and
forming a gate over the channel region. - View Dependent Claims (100, 101, 102, 103, 104)
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Specification