Integration of micro-electro mechanical systems and active circuitry

• US 20060125084A1
• Filed: 12/15/2004
• Published: 06/15/2006
• Est. Priority Date: 12/15/2004
• Status: Abandoned Application

• Current Assignee: Avago Technologies Wireless IP Singapore Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies Wireless IP Singapore Pte Limited (Broadcom, Inc.)
• Inventors: Dungan, Thomas E., Fazzio, Ronald S.
• Application Number:
  US11/012,574
• Publication Number:
  US 20060125084A1
• Time in Patent Office: Days
• US Class Current: 257/704
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A single integrated wafer package includes a micro-electro mechanical system (MEMS) wafer, an active device wafer, and a seal ring. The MEMS wafer has a first surface and includes at least one MEMS component on its first surface. The active device wafer has a first surface and includes an active device circuit on its first surface. The seal ring is adjacent the first surface of the MEMS wafer such that a seal is formed about the MEMS component. An external contact is provided on the wafer package. The external contact is accessible externally to the wafer package and is electrically coupled to the MEMS device or active device circuit of the active device wafer.

Claims

1. A single integrated wafer package comprising:

a micro-electro mechanical system (MEMS) wafer having at least one MEMS component;

an active device wafer having an active device circuit;

a seal ring sandwiched between the MEMS wafer and the active device wafer such that a sealed chamber is formed about the MEMS component; and

an external contact to the wafer package, wherein the external contact is accessible externally to the wafer package and is electrically coupled to the active device circuit of the active device wafer.

2. The wafer package of claim 1 wherein the sealed chamber is a hermetically sealed chamber.

3. The wafer package of claim 1 wherein the MEMS wafer and the active device wafer are bonded together with a thermocompression bond.

4. The wafer package of claim 1 wherein the MEMS component is one of a group comprising a thin film acoustic resonator (FBAR) and a solidly mounted acoustic resonator (SMR).

5. The wafer package of claim 1 further including a dielectric layer that is etched to form a raised ridge that is the seal ring that forms the seal about the MEMS component and that aids in coupling the wafers together such that they form a single integrated component.

6. The wafer package of claim 5 wherein the seal is a hermetic seal.

7. The wafer package of claim 5 wherein the dielectric layer between the MEMS wafer and the active device wafer that forms the seal ring is made from the group comprising silicon nitride and silicon oxide.

8. The wafer package of claim 5 wherein the MEMS wafer further includes a plurality of vias through which an electrical connection is made between the active device circuit and the external contact.

9. The wafer package of claim 5 wherein the MEMS wafer further includes a plurality of vias through which an electrical connection is made between the MEMS component and the external contact.

10. The wafer package of claim 5 wherein the active device wafer further includes a plurality of vias through which an electrical connection is made between the active device circuit and the external contact.

11. The wafer package of claim 5 wherein the active device wafer further includes a plurality of vias through which an electrical connection is made between the MEMS component and the external contact.

12. The wafer package of claim 5 wherein the MEMS wafer has partial saw cuts such that interconnects on the active device wafer are accessible as side interconnects.

13. The wafer package of claim 5 wherein the active device wafer has partial saw cuts such that interconnects on the MEMS wafer are accessible as side interconnects.

14. The wafer package of claim 5 wherein a metallization layer is formed over the dielectric layer to facilitate electrical connection between the active device circuit and the MEMS component.

15. A method for fabricating a wafer package comprising:

providing an active device wafer with an interconnect that is electrically coupled to an active device circuit;

depositing a dielectric layer over the active device wafer;

etching the dielectric layer to form a raised ridge that forms a ring around a perimeter of the active device wafer; and

bonding a micro-electro mechanical system (MEMS) wafer having at least one MEMS component to the active device wafer at the wafer level, wherein the raised ridge also forms a ring around the MEMS component once bonded, such that raised ridge, MEMS wafer and active device wafer seal the MEMS component.

16. The method of claim 15 further including depositing a metallization layer over the dielectric layer in order to aid in bonding the MEMS wafer to the active device wafer.

17. The method of claim 15, wherein the seal formed by the raised ridge between the MEMS wafer and active device wafer is a hermetic seal.

18. The method of claim 15 further including fabricating through vias in the MEMS wafer to provide electrical contact points to the wafer package that are accessible externally to the wafer package.

19. The method of claim 15 further including fabricating through vias in the active device wafer to provide electrical contact points to the wafer package that are accessible externally to the wafer package.

20. The method of claim 15 further including making partial saw cuts to the MEMS wafer to provide access to electrical contact points within the wafer package that are accessible externally to the wafer package.

21. The method of claim 15 further including making partial saw cuts to the active device wafer to provide access to electrical contact points within the wafer package that are accessible externally to the wafer package.

22. The method of claim 15, wherein bonding the MEMS wafer to the active device wafer includes bonding the wafers together with a thermocompression bond.

23. A single integrated wafer package comprising:

a micro-electro mechanical system (MEMS) wafer having at least one MEMS component;

an active device wafer having an active device circuit;

sealing means between the MEMS wafer and the active device wafer for forming a seal around the MEMS component; and

an external contact to the wafer package, wherein the external contact is accessible externally to the wafer package and is electrically coupled to one of the group comprising the active device circuit of the active device wafer and the MEMS component of the MEMS wafer.