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Transistor device having a delafossite material

  • US 20060125098A1
  • Filed: 02/02/2006
  • Published: 06/15/2006
  • Est. Priority Date: 12/17/2003
  • Status: Abandoned Application
First Claim
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1. A method of using a transistor device, the transistor device comprising a channel of p-type substantially transparent delafossite material, a source contact interfaced to said channel, a drain contact interfaced to said channel, a gate contact, and a gate dielectric between said gate contact and said channel, the method comprising:

  • arranging the transistor device with additional transistor devices;

    providing voltages to said source, drain and gate contacts to induce conduction in said channel.

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