Transistor device having a delafossite material
First Claim
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1. A method of using a transistor device, the transistor device comprising a channel of p-type substantially transparent delafossite material, a source contact interfaced to said channel, a drain contact interfaced to said channel, a gate contact, and a gate dielectric between said gate contact and said channel, the method comprising:
- arranging the transistor device with additional transistor devices;
providing voltages to said source, drain and gate contacts to induce conduction in said channel.
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Abstract
A transistor device includes a channel of p-type substantially transparent delafossite material. Source and drain contacts are interfaced to the channel. Gate dielectric is between a gate contact and the channel.
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Citations
23 Claims
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1. A method of using a transistor device, the transistor device comprising a channel of p-type substantially transparent delafossite material, a source contact interfaced to said channel, a drain contact interfaced to said channel, a gate contact, and a gate dielectric between said gate contact and said channel, the method comprising:
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arranging the transistor device with additional transistor devices;
providing voltages to said source, drain and gate contacts to induce conduction in said channel. - View Dependent Claims (2, 3, 4, 5, 6, 15, 19, 20, 21, 22)
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7. A method of forming a transistor device, the method comprising:
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in an appropriate sequence for a desired transistor configuration, depositing thin film layers including thin film gate, source, and drain contacts, gate dielectric and a substantially transparent delafossite channel; and
at appropriate times during the appropriate sequence, patterning the thin film layers. - View Dependent Claims (8, 9, 10, 11)
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12. A method of forming a transistor device, the method comprising:
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forming a channel of a p-type substantially transparent delafossite material;
forming a source contact interfaced to said channel;
forming a drain contact interfaced to said channel;
forming a gate contact; and
forming a gate dielectric between said gate contact and said channel. - View Dependent Claims (13, 14, 16, 17, 18, 23)
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Specification